POWER SEMICONDUCTOR UNIT, POWER MODULE, PRODUCTION METHOD FOR POWER SEMICONDUCTOR UNIT AND PRODUCTION METHOD FOR POWER MODULE

Title:

POWER SEMICONDUCTOR UNIT, POWER MODULE, PRODUCTION METHOD FOR POWER SEMICONDUCTOR UNIT AND PRODUCTION METHOD FOR POWER MODULE

Document Type and Number:

WIPO Patent Application WO/2012/014843

Kind Code:

A1

Abstract:

A heat radiating surface (7b, 8b) of an electrode lead frame (7, 8) is in thermal contact with a heat radiating member (301) through an insulation sheet (10) and the heat from a power semiconductor element (5) is radiated to the heat radiating member (thick walled part (301)). Either an exposed region of the heat radiating surface (7b, 8b) or the surface (13b) of a mould member (sealant (13)), which is in contact with said exposed region, protrudes and forms an irregular step. The step profile formed between the surface of the protruding side and the surface of the recessed side of the irregular step is formed with inclined surfaces (7a, 13a) in such a manner that the angle with the surface of the protruding side and the angle with the surface of the recessed side are each obtuse.

Inventors:

TSUYUNO NOBUTAKE (JP)
HOZOJI HIROSHI (JP)
ISHII TOSHIAKI (JP)
SUWA TOKIHITO (JP)
NAKATSU KINYA (JP)
TOKUYAMA TAKESHI (JP)
KUSUKAWA JUNPEI (JP)

Application Number:

PCT/JP2011/066854

Publication Date:

February 02, 2012

Filing Date:

July 25, 2011

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
TSUYUNO NOBUTAKE (JP)
HOZOJI HIROSHI (JP)
ISHII TOSHIAKI (JP)
SUWA TOKIHITO (JP)
NAKATSU KINYA (JP)
TOKUYAMA TAKESHI (JP)
KUSUKAWA JUNPEI (JP)

International Classes:

H01L23/29; B60L9/18; B60L50/15; B60L50/16; H01L23/28; H01L25/07; H01L25/18; H02M7/48; H05K7/20

Foreign References:

JPH09153574A	1997-06-10
JP2009200338A	2009-09-03
JP2011091259A	2011-05-06
JP2011129818A	2011-06-30
JP2004303869A	2004-10-28

Other References: