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Title:
POWER STORAGE DEVICE, POWER STORAGE DEVICE ELECTRODE, AND METHOD FOR MANUFACTURING SAID POWER STORAGE DEVICE AND POWER STORAGE DEVICE ELECTRODE
Document Type and Number:
WIPO Patent Application WO/2019/163896
Kind Code:
A1
Abstract:
This power storage device comprises: an electrode unit comprising a positive electrode, a separator, and a negative electrode; and an electrolyte. The negative electrode comprises: a negative electrode current collector; and a negative electrode active material layer formed on the surface of the negative electrode current collector. The negative electrode is doped with lithium. The power storage device comprises: first through-holes that pass through the negative electrode current collector in the thickness direction; and second through-holes that pass through the negative electrode active material layer in the thickness direction at least on one surface of the negative electrode current collector. The open area rate of the first through-holes in the negative electrode current collector, or the open area rate of the second through-holes in the negative electrode active material layer is 0.001-1% (inclusive).

Inventors:
AITA, Kazunari (1-9-2 Higashi-Shinbashi, Minato-k, Tokyo 40, 〒1058640, JP)
YAKUSHIJI, Hiroki (1-9-2 Higashi-Shinbashi, Minato-k, Tokyo 40, 〒1058640, JP)
SUZUKI, Hirobumi (1-9-2 Higashi-Shinbashi, Minato-k, Tokyo 40, 〒1058640, JP)
UTAKA, Tomohiro (1-9-2 Higashi-Shinbashi, Minato-k, Tokyo 40, 〒1058640, JP)
NAOI, Masaya (1-9-2 Higashi-Shinbashi, Minato-k, Tokyo 40, 〒1058640, JP)
KOJIMA, Kenji (1-9-2 Higashi-Shinbashi, Minato-k, Tokyo 40, 〒1058640, JP)
Application Number:
JP2019/006576
Publication Date:
August 29, 2019
Filing Date:
February 21, 2019
Export Citation:
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Assignee:
JSR CORPORATION (1-9-2, Higashi-Shinbashi Minato-k, Tokyo 40, 〒1058640, JP)
International Classes:
H01G11/26; H01G11/06; H01G11/50; H01G11/70; H01G11/86; H01M4/13; H01M4/139; H01M4/70; H01M6/16; H01M10/0585; H01M12/06; H01M12/08
Domestic Patent References:
WO2015107893A12015-07-23
Foreign References:
JP2011159642A2011-08-18
JP2012004491A2012-01-05
Attorney, Agent or Firm:
NAGOYA INTERNATIONAL PATENT FIRM (Meishin Bldg, 20-19 Nishiki 1-chome, Naka-ku, Nagoya-sh, Aichi 03, 〒4600003, JP)
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