Title:
PRECURSOR COMPOSITION FOR FORMING AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/014885
Kind Code:
A1
Abstract:
Provided is a precursor composition for forming an amorphous metal oxide semiconductor layer, which contains a metal salt, a first amide, and a solvent that contains water as a main component. An amorphous metal oxide semiconductor layer is formed using the precursor composition.
Inventors:
HIROI, Yoshiomi (NISSAN CHEMICAL INDUSTRIES LTD., 488-6, Suzumi-cho, Funabashi-sh, Chiba 52, 〒2740052, JP)
広井 佳臣 (〒52 千葉県船橋市鈴身町４８８番地６ 日産化学工業株式会社 電子材料研究所内 Chiba, 〒2740052, JP)
広井 佳臣 (〒52 千葉県船橋市鈴身町４８８番地６ 日産化学工業株式会社 電子材料研究所内 Chiba, 〒2740052, JP)
Application Number:
JP2011/066950
Publication Date:
February 02, 2012
Filing Date:
July 26, 2011
Export Citation:
Assignee:
NISSAN CHEMICAL INDUSTRIES, LTD. (7-1 Kanda Nishiki-cho 3-chome, Chiyoda-ku Tokyo, 54, 〒1010054, JP)
日産化学工業株式会社 (〒54 東京都千代田区神田錦町３丁目７番地１ Tokyo, 〒1010054, JP)
HIROI, Yoshiomi (NISSAN CHEMICAL INDUSTRIES LTD., 488-6, Suzumi-cho, Funabashi-sh, Chiba 52, 〒2740052, JP)
日産化学工業株式会社 (〒54 東京都千代田区神田錦町３丁目７番地１ Tokyo, 〒1010054, JP)
HIROI, Yoshiomi (NISSAN CHEMICAL INDUSTRIES LTD., 488-6, Suzumi-cho, Funabashi-sh, Chiba 52, 〒2740052, JP)
International Classes:
H01L21/368; H01L29/786
Attorney, Agent or Firm:
KURIHARA, Hiroyuki et al. (Kurihara International Patent Office, Iwasaki Bldg. 6F 3-15, Hiroo 1-chome, Shibuya-k, Tokyo 12, 〒1500012, JP)
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Claims:
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