Title:
PRECURSOR COMPOSITION FOR FORMING METAL FILM, METAL FILM FORMING METHOD USING SAME, AND SEMICONDUCTOR DEVICE COMPRISING SAME METAL FILM
Document Type and Number:
WIPO Patent Application WO/2020/122506
Kind Code:
A2
Abstract:
The present invention relates to a precursor composition for forming a metal film, characterized by comprising a zirconium compound represented by any one of chemical formulas 1 to 3 and a hafnium compound represented by any one of chemical formulas 4 to 6.
Inventors:
HONG CHANG SUNG (KR)
PARK YONG JOO (KR)
OH TAE HOON (KR)
HWANG IN CHUN (KR)
LEE SANG KYUNG (KR)
KIM DONG HYUN (KR)
PARK YONG JOO (KR)
OH TAE HOON (KR)
HWANG IN CHUN (KR)
LEE SANG KYUNG (KR)
KIM DONG HYUN (KR)
Application Number:
PCT/KR2019/017151
Publication Date:
June 18, 2020
Filing Date:
December 06, 2019
Export Citation:
Assignee:
SK TRICHEM (KR)
International Classes:
C23C16/18; C07F7/00; C23C16/448; C23C16/455; C23C16/48; C23C16/50; H01L21/02; H01L21/285; H01L29/51
Attorney, Agent or Firm:
LEE, Byong Jin (KR)
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