Title:
PRECURSOR COMPOSITION AND METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2012/008554
Kind Code:
A1
Abstract:
The present invention provides a precursor composition for forming a conductive oxide film which has high electrical conductivity and in which an amorphous structure can be maintained steadily even when the film is heated to a high temperature, in a simple liquid phase process. This precursor composition comprises: at least one compound selected from the group consisting of carboxylic acid salts, nitric acid salts and sulfuric acid salts of lanthanoid elements (excluding cerium), at least one compound selected from the group consisting of carboxylic acid salts, nitrosyl carboxylic acid salts, nitrosyl nitric acid salts and nitrosyl sulfuric acid salts of ruthenium, iridium and rhodium, and a solvent comprising at least one compound selected from the group consisting of carboxylic acids, alcohols and ketones.
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Inventors:
SHIMODA Tatsuya (1-50, Asahidai Nomi-sh, Ishikawa 11, 〒9231211, JP)
下田 達也 (〒11 石川県能美市旭台１－５０ Ishikawa, 〒9231211, JP)
下田 達也 (〒11 石川県能美市旭台１－５０ Ishikawa, 〒9231211, JP)
Application Number:
JP2011/066165
Publication Date:
January 19, 2012
Filing Date:
July 08, 2011
Export Citation:
Assignee:
JAPAN SCIENCE AND TECHNOLOGY AGENCY (1-8 Honcho 4-chome, Kawaguchi-shi Saitama, 12, 〒3320012, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町４丁目１番８号 Saitama, 〒3320012, JP)
SHIMODA Tatsuya (1-50, Asahidai Nomi-sh, Ishikawa 11, 〒9231211, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町４丁目１番８号 Saitama, 〒3320012, JP)
SHIMODA Tatsuya (1-50, Asahidai Nomi-sh, Ishikawa 11, 〒9231211, JP)
International Classes:
H01B13/00; C01G55/00; H01B5/14; H01L21/28; H01L21/288; H01L21/336; H01L29/786
Attorney, Agent or Firm:
OHSHIMA Masataka (OHSHIMA PATENT OFFICE, BN Gyoen Building 17-11, Shinjuku 1-chome, Shinjuku-ku Tokyo 22, 〒1600022, JP)
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Claims:
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