Title:
PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITION (ALD) OR CHEMICAL VAPOR DEPOSITION (CVD), AND ALD/CVD METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/203407
Kind Code:
A1
Abstract:
The present invention relates to a precursor compound and, more specifically, to: a nonpyrophoric precursor compound usable for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD); and an ALD/CVD method using same.
Inventors:
HWANG JUNG-WUN (KR)
MUN KI-YEUNG (KR)
LEE JU-WON (KR)
YEOM KYU-HYUN (KR)
SEOK JANG-HYEON (KR)
PARK JUNG-WOO (KR)
MUN KI-YEUNG (KR)
LEE JU-WON (KR)
YEOM KYU-HYUN (KR)
SEOK JANG-HYEON (KR)
PARK JUNG-WOO (KR)
Application Number:
PCT/KR2018/012722
Publication Date:
October 24, 2019
Filing Date:
October 25, 2018
Export Citation:
Assignee:
HANSOL CHEMICAL CO LTD (KR)
International Classes:
C07F5/06; C07F3/06; C23C16/18; C23C16/34; C23C16/40; C23C16/455
Foreign References:
| KR20170055268A | 2017-05-19 | |||
| KR20120072986A | 2012-07-04 | |||
| KR20160082350A | 2016-07-08 | |||
| KR20160101697A | 2016-08-25 | |||
| KR101787204B1 | 2017-10-18 |
Other References:
YUN, JAESOOK ET AL.: "Effects of Ligand and Cosolvent on Oxidative Coupling Polymerization of 2,6-Dimethylphenol Catalyzed by Chelating Amine-Copper(II) Complexes", MACROMOLECULAR RESEARCH, vol. 21, no. 10, 24 May 2013 (2013-05-24) - October 2013 (2013-10-01), pages 1054 - 1058, XP055646334
J. VAC. SCI. TECHNOL. A, vol. 30, no. 2, 2012, pages 021505 - 1
J. VAC. SCI. TECHNOL. A, vol. 30, no. 2, 2012, pages 021505 - 1
Attorney, Agent or Firm:
HANYANG PATENT FIRM (KR)
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