Title:
PRECURSOR FOR FORMING LOW DIELECTRIC CONSTANT SILICON-CONTAINING THIN FILM, METHOD FOR FORMING LOW DIELECTRIC CONSTANT SILICON-CONTAINING THIN FILM USING SAME, AND SEMICONDUCTOR DEVICE INCLUDING LOW DIELECTRIC CONSTANT SILICON-CONTAINING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2023/106623
Kind Code:
A1
Abstract:
The present invention pertains to: a precursor for forming a low dielectric constant silicon-containing thin film including a silicon-containing compound represented by Formula 1; a method for forming a thin film using the precursor; and a semiconductor device including a low dielectric constant silicon-containing thin film manufactured by the thin film forming method.
Inventors:
PARK JONG RYUL (KR)
KANG TAE HYEONG (KR)
PARK YONG JOO (KR)
KIM SANG HO (KR)
HWANG IN CHUN (KR)
LEE SANG KYUNG (KR)
KANG TAE HYEONG (KR)
PARK YONG JOO (KR)
KIM SANG HO (KR)
HWANG IN CHUN (KR)
LEE SANG KYUNG (KR)
Application Number:
PCT/KR2022/016538
Publication Date:
June 15, 2023
Filing Date:
October 27, 2022
Export Citation:
Assignee:
SK TRI CHEM CO LTD (KR)
International Classes:
C07F7/18; C23C16/30; C23C16/455; C23C16/50; H01L21/02
Foreign References:
| KR20080000538A | 2008-01-02 | |||
| KR100447684B1 | 2004-09-08 | |||
| KR101910020B1 | 2018-10-19 | |||
| US20030049460A1 | 2003-03-13 | |||
| KR20100054797A | 2010-05-25 |
Attorney, Agent or Firm:
LEE, Byong Jin (KR)
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