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Title:
PRECURSOR STRUCTURE OF PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME, PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION FILM USING THOSE AND METHOD FOR MANUFACTURING SAME, AND PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION ELEMENT USING THOSE
Document Type and Number:
WIPO Patent Application WO/2019/049740
Kind Code:
A1
Abstract:
By utilizing, as a basic configuration, a combination between MgAl2O4 and an alloy containing Fe as the main component, the present invention provides a perpendicular magnetization film structure having high interface-induced magnetic anisotropy. The perpendicular magnetization film structure (101) according to one embodiment of the present invention is characterized by being provided with: a substrate (2) having an alignment film of a cubic single crystal having the (001) plane or of a cubic or tetragonal system grown through the (001) plane; a foundation layer (3) which is located on the substrate and which is formed of a good conductor; a perpendicular magnetization layer (7) which is located on the foundation layer and which is formed of a product layer of an iron-based alloy containing aluminum as a composition material; and a non-magnetic layer (6) which is disposed on the perpendicular magnetization layer and which is an oxide having a spinel structure or a structure where the cation site in a spinel structure is disordered, and which has grown through the (001) plane.

Inventors:
SUKEGAWA Hiroaki (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 〒3050047, JP)
SCHEIKE Thomas (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 〒3050047, JP)
MITANI Seiji (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 〒3050047, JP)
Application Number:
JP2018/031877
Publication Date:
March 14, 2019
Filing Date:
August 29, 2018
Export Citation:
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Assignee:
NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-shi Ibaraki, 47, 〒3050047, JP)
International Classes:
H01L43/10; G01R33/09; H01F10/14; H01F10/30; H01L21/8239; H01L27/105; H01L43/08; H01L43/12
Foreign References:
JP2017041606A2017-02-23
JPH07320933A1995-12-08
US20140110804A12014-04-24
Other References:
BELMOUBARIK, MOHAMED ET AL.: "MgA1204(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target", APPLIED PHYSICS LETTERS, 30 March 2016 (2016-03-30), pages 132404-1, XP012206382
Attorney, Agent or Firm:
TSUZUKI Noriaki (Maruishi Bldg. 3F, 1-10-4 Kajicho, Chiyoda-k, Tokyo 44, 〒1010044, JP)
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