Title:
PRECURSOR STRUCTURE OF PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME, PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION FILM USING THOSE AND METHOD FOR MANUFACTURING SAME, AND PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION ELEMENT USING THOSE
Document Type and Number:
WIPO Patent Application WO/2019/049740
Kind Code:
A1
Abstract:
By utilizing, as a basic configuration, a combination between MgAl2O4 and an alloy containing Fe as the main component, the present invention provides a perpendicular magnetization film structure having high interface-induced magnetic anisotropy. The perpendicular magnetization film structure (101) according to one embodiment of the present invention is characterized by being provided with: a substrate (2) having an alignment film of a cubic single crystal having the (001) plane or of a cubic or tetragonal system grown through the (001) plane; a foundation layer (3) which is located on the substrate and which is formed of a good conductor; a perpendicular magnetization layer (7) which is located on the foundation layer and which is formed of a product layer of an iron-based alloy containing aluminum as a composition material; and a non-magnetic layer (6) which is disposed on the perpendicular magnetization layer and which is an oxide having a spinel structure or a structure where the cation site in a spinel structure is disordered, and which has grown through the (001) plane.
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Inventors:
SUKEGAWA HIROAKI (JP)
SCHEIKE THOMAS (JP)
MITANI SEIJI (JP)
SCHEIKE THOMAS (JP)
MITANI SEIJI (JP)
Application Number:
PCT/JP2018/031877
Publication Date:
March 14, 2019
Filing Date:
August 29, 2018
Export Citation:
Assignee:
NAT INST MATERIALS SCIENCE (JP)
International Classes:
H01L43/10; G01R33/09; H01F10/14; H01F10/30; H01L21/8239; H01L27/105; H01L43/08; H01L43/12
Domestic Patent References:
| WO2010119928A1 | 2010-10-21 | |||
| WO2010134435A1 | 2010-11-25 |
Foreign References:
| JP2017041606A | 2017-02-23 | |||
| JPH07320933A | 1995-12-08 | |||
| US20140110804A1 | 2014-04-24 | |||
| JP2013175615A | 2013-09-05 | |||
| JP2017041606A | 2017-02-23 |
Other References:
BELMOUBARIK, MOHAMED ET AL.: "MgA1204(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target", APPLIED PHYSICS LETTERS, 30 March 2016 (2016-03-30), pages 132404-1, XP012206382
A. PERUMAL, Y. K. TAKAHASHIK. HONO: "L1 FePt-C Nanogranular Perpendicular Anisotropy Films with Narrow Size Distribution", APPLIED PHYSICS EXPRESS, vol. 1, 2008, pages 101301
S. IKEDA ET AL.: "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction", NATURE MATERIALS, vol. 9, 2010, pages 721 - 724
Z. C. WENH. SUKEGAWAS. MITANIK. INOMATA: "Perpendicular magnetization of Co FeAI full-Heusler alloy films induced by MgO interface", APPLIED PHYSICS LETTERS, vol. 98, 2011, pages 242507, XP012141063, DOI: 10.1063/1.3600645
J. KOOH. SUKEGAWAS. MITANI: "Interface perpendicular magnetic anisotropy in Fe/MgA1 0 layered structures", PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, vol. 8, 2014, pages 841 - 844
See also references of EP 3683851A4
A. PERUMAL, Y. K. TAKAHASHIK. HONO: "L1 FePt-C Nanogranular Perpendicular Anisotropy Films with Narrow Size Distribution", APPLIED PHYSICS EXPRESS, vol. 1, 2008, pages 101301
S. IKEDA ET AL.: "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction", NATURE MATERIALS, vol. 9, 2010, pages 721 - 724
Z. C. WENH. SUKEGAWAS. MITANIK. INOMATA: "Perpendicular magnetization of Co FeAI full-Heusler alloy films induced by MgO interface", APPLIED PHYSICS LETTERS, vol. 98, 2011, pages 242507, XP012141063, DOI: 10.1063/1.3600645
J. KOOH. SUKEGAWAS. MITANI: "Interface perpendicular magnetic anisotropy in Fe/MgA1 0 layered structures", PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, vol. 8, 2014, pages 841 - 844
See also references of EP 3683851A4
Attorney, Agent or Firm:
TSUZUKI Noriaki (JP)
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