Title:
PREPARATION METHOD OF COMPOUND SEMICONDUCTOR THIN-FILM MATERIAL
Document Type and Number:
WIPO Patent Application WO/2016/101388
Kind Code:
A1
Abstract:
The present invention relates to a preparation method of a compound semiconductor thin-film material. A large-scale preparation of the compound semiconductor target thin-film material can be realized via a one-step method of the present invention, preparing a plurality of thin films at once, having a short preparation period, a high preparation efficiency and a low preparation cost, being well adapted to a substrate (base sheet) material without requiring special processing of the substrate (base sheet) thereof; the compound semiconductor thin-film material prepared via a two-step method has a high purity and good crystallinity; a sealing system is employed in the preparation process, thus avoiding raw material loss caused by sublimation, and having high process controllability; and the preparation temperature is lower, thus reducing energy consumption.
Inventors:
LIU XINGQUAN (CN)
LIU YIDING (CN)
ZHANG MINGJU (CN)
ZHANG ZHENG (CN)
ZHAO HONGYUAN (CN)
HE YONGCHENG (CN)
ZHANG HUAIWU (CN)
LIU YIDING (CN)
ZHANG MINGJU (CN)
ZHANG ZHENG (CN)
ZHAO HONGYUAN (CN)
HE YONGCHENG (CN)
ZHANG HUAIWU (CN)
Application Number:
PCT/CN2015/072140
Publication Date:
June 30, 2016
Filing Date:
February 03, 2015
Export Citation:
Assignee:
UNIV ELECTRONIC SCIENCE & TECH (CN)
International Classes:
C23C16/44; C23C14/06; C23C14/24; C23C16/30
Foreign References:
| CN103820771A | 2014-05-28 | |||
| CN103866379A | 2014-06-18 | |||
| CN103911600A | 2014-07-09 | |||
| CN103147038A | 2013-06-12 | |||
| CN103159193A | 2013-06-19 | |||
| CN103173715A | 2013-06-26 |
Attorney, Agent or Firm:
BEIJING ZHCC INTELLECTUAL PROPERTY CO.,LTD (CN)
北京众合诚成知识产权代理有限公司 (CN)
北京众合诚成知识产权代理有限公司 (CN)
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