Title:
PREPARATION METHOD FOR FIELD EFFECT TRANSISTOR AND FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/010151
Kind Code:
A1
Abstract:
A preparation method for a field effect transistor and a field effect transistor, relating to the field of technological development of field effect transistors. The preparation method comprises: forming a source electrode (2), a drain electrode (3) and a two-dimensional material growth template (7) on a non-metal substrate (1); and using gas to grow a two-dimensional material on the two-dimensional material growth template (7), and using the two-dimensional material as a channel (4), wherein the source electrode (2) and the drain electrode (3) are used for catalysing the gas to decompose elements of the two-dimensional material, so that the elements of the two-dimensional material grow on the two-dimensional material growth template (7) to form the channel (4), and at the same time, the gas is used to grow a first transition layer (8) on a surface of the source electrode (2) and grow a second transition layer (9) on a surface of the drain electrode (3). A two-dimensional material acting as a channel (4) may be directly formed during the process of preparing a field effect transistor by means of the catalytic action of a source electrode (2) and a drain electrode (3), thereby omitting the transfer process of the two-dimensional material, and the channel (4) may be connected to the first transition layer (8) and the second transition layer (9) via a chemical bond, thereby reducing contact resistance between the source electrode (2), the drain electrode (3) and the channel (4).
Inventors:
ZHAO CHONG (CN)
TANG YANGYANG (CN)
ZHANG CHENXIONG (CN)
TANG YANGYANG (CN)
ZHANG CHENXIONG (CN)
Application Number:
PCT/CN2016/090084
Publication Date:
January 18, 2018
Filing Date:
July 14, 2016
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/02
Foreign References:
| CN102738237A | 2012-10-17 | |||
| CN103227194A | 2013-07-31 | |||
| US20090169919A1 | 2009-07-02 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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