Title:
PREPARATION METHOD FOR FRONT SIDE ELECTRODE OF CRYSTALLINE SILICON SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2017/092365
Kind Code:
A1
Abstract:
A preparation method for a front side electrode of a crystalline silicon solar cell, comprising the step of forming a main gate line (10) and an auxiliary gate line (20) on a solar cell. The method comprises: S101, providing a screen printing plate having the pattern of the main gate line (10), and forming the main gate line (10) on a solar cell by means of a screen printing process; S102, providing a steel screen printing plate having the pattern of the auxiliary gate line (20), and forming the auxiliary gate line (20) on the solar cell by means of a steel screen printing process; and S103, sintering the solar cell provided with the main gate line (10) and the auxiliary gate line (20). In the method, the main gate line (10) and the auxiliary gate line (20) are respectively prepared by means of two printing processes, so that an aspect ratio of the auxiliary gate line (20) can be improved, a power loss brought by the resistance of gate lines can be reduced, and an optical loss also can be reduced.
Inventors:
LI JIALIANG (CN)
HE FENGQIN (CN)
YANG ZHENYING (CN)
HE FENGQIN (CN)
YANG ZHENYING (CN)
Application Number:
PCT/CN2016/089964
Publication Date:
June 08, 2017
Filing Date:
July 14, 2016
Export Citation:
Assignee:
WANG NENGQING (CN)
International Classes:
H01L31/18; H01L31/0224; B41M1/12
Foreign References:
| CN102555562A | 2012-07-11 | |||
| CN102945866A | 2013-02-27 | |||
| CN202293614U | 2012-07-04 | |||
| CN105514183A | 2016-04-20 |
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