Title:
PREPARATION METHOD FOR GAN-BASED VERTICAL CAVITY SURFACE EMITTING LASER
Document Type and Number:
WIPO Patent Application WO/2021/004181
Kind Code:
A1
Abstract:
Provided is a preparation method for GaN-based vertical cavity surface emitting laser, forming a patterned metal substrate on a seed layer by using the photo-etching and patterned electroplating technologies; transferring a sample to a temporary substrate by using the glue bonding technology; removing a sapphire substrate by using the self-splitting laser stripping technology and separating devices simultaneously; removing a buffer layer, a u-GaN layer and part of an n-GaN layer; making an n metal electrode and a top dielectric film DBR; and removing the temporary substrate to obtain the discrete GaN-based vertical cavity surface emitting laser. The heat dissipation performance of devices is improved, and the problems of metal crimping and short circuit of devices caused by metal cutting are avoided. The process flow of device preparation is simplified, and the cost is reduced.
Inventors:
YING LEIYING (CN)
WANG CAN (CN)
ZAHNG BAOPING (CN)
XU RONGBIN (CN)
XU HUAN (CN)
WANG CAN (CN)
ZAHNG BAOPING (CN)
XU RONGBIN (CN)
XU HUAN (CN)
Application Number:
PCT/CN2020/092743
Publication Date:
January 14, 2021
Filing Date:
May 28, 2020
Export Citation:
Assignee:
UNIV XIAMEN (CN)
International Classes:
H01S5/183; H01L21/00; H01L33/00; H01S5/024
Foreign References:
| CN110265864A | 2019-09-20 | |||
| CN103325894A | 2013-09-25 | |||
| CN103094429A | 2013-05-08 | |||
| CN102522318A | 2012-06-27 | |||
| CN101366121A | 2009-02-11 | |||
| CN1998065A | 2007-07-11 | |||
| CN107404066A | 2017-11-28 |
Attorney, Agent or Firm:
XIAMEN JINGCHENGXINCHUANG INTELLECTUAL PROPERTY AGENCY CO., LTD (CN)
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