Title:
PREPARATION METHOD FOR HETEROGENEOUS SIGE-BASED PLASMA PIN DIODE STRING USED FOR SLEEVE ANTENNA
Document Type and Number:
WIPO Patent Application WO/2018/113454
Kind Code:
A1
Abstract:
A preparation method for a heterogeneous SiGe-based plasma pin diode string used for a sleeve antenna, the preparation method comprising: selecting an SiGeOI substrate (101, 301) of a certain crystal orientation, and configuring an isolation region on the SiGeOI substrate (101, 301); etching the substrate (301) to form a P type trench and an N type trench, the depths of the P type trench and the N type trench being less than the thickness of the top layer SiGe of the substrate; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in the top layer SiGe of the substrate by means of ion implantation; and forming a lead on the substrate so as to complete the preparation of the heterogeneous SiGe-based plasma pin diode. The high-performance heterogeneous SiGe-based plasma pin diode, which is applicable to formation of a solid-state plasma antenna, may be prepared and provided by means of a deep trench isolation technique and an ion implantation process.
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Inventors:
LIANG ZHANG (CN)
YU ZUO (CN)
YU ZUO (CN)
Application Number:
PCT/CN2017/110919
Publication Date:
June 28, 2018
Filing Date:
November 14, 2017
Export Citation:
Assignee:
XIAN CREATION KEJI CO LTD (CN)
International Classes:
H01L21/329
Foreign References:
| CN106783596A | 2017-05-31 | |||
| CN103682610A | 2014-03-26 | |||
| CN102956993A | 2013-03-06 | |||
| US20010049180A1 | 2001-12-06 | |||
| US20050218397A1 | 2005-10-06 |
Attorney, Agent or Firm:
XI'AN JUST IP FIRM (CN)
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