Title:
PREPARATION METHOD FOR POLYCRYSTALLINE SILICON LAYER AND DISPLAY SUBSTRATE, AND DISPLAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/188594
Kind Code:
A1
Abstract:
A preparation method for a polycrystalline silicon layer and a display substrate, and a display substrate. The preparation method for a polycrystalline silicon layer comprises: forming an amorphous silicon layer (10) on a substrate through a patterning process, wherein the amorphous silicon layer (10) comprises an amorphous silicon bottom part (101) and a plurality of first bulge structures (102) and a plurality of second bulge structures (103) located on the amorphous silicon bottom part (101), the plurality of first bulge structures (102) being located in a first region A, the plurality of second bulge structures (103) being located in a second region B, and the spacing among the plurality of first bulge structures (102) being less than that among the plurality of second bulge structures (103); and conducting excimer laser crystallization on the amorphous silicon layer (10) to form a polycrystalline silicon layer. The method can simultaneously integrate requirements of different devices for the migration rate.
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Inventors:
ZHANG HUIJUAN (CN)
KANG PENGTAO (CN)
KANG PENGTAO (CN)
Application Number:
PCT/CN2014/092061
Publication Date:
December 17, 2015
Filing Date:
November 24, 2014
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/77; H01L21/02
Foreign References:
| CN1645612A | 2005-07-27 | |||
| TW200628013A | 2006-08-01 | |||
| CN1622718A | 2005-06-01 | |||
| CN103715226A | 2014-04-09 | |||
| CN1758127A | 2006-04-12 | |||
| CN104037127A | 2014-09-10 | |||
| CN103681776A | 2014-03-26 | |||
| CN103219228A | 2013-07-24 | |||
| US20040175870A1 | 2004-09-09 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
北京市柳沈律师事务所 (CN)
北京市柳沈律师事务所 (CN)
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