Title:
PRESSURE SENSING UNIT, PRESSURE SENSOR AND PRESSURE SENSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/219081
Kind Code:
A1
Abstract:
A pressure sensing unit (01), comprising: a first substrate (10) and a second substrate (20) arranged opposite each other, and at least one vertical-type thin-film transistor (100) arranged between the first substrate (10) and the second substrate (20). Each vertical-type thin-film transistor (100) comprises: a first electrode (101), a semiconductor active layer (103), a second electrode (102), at least one insulating support (104) and a gate electrode (105) sequentially arranged in the direction from the first substrate (10) to the second substrate (20), wherein there is a first air gap (106), formed by the at least one insulating support (104), between the gate electrode (105) of each vertical-type thin-film transistor (100) and the second electrode (102) thereof. The pressure sensor (01) has a relatively high pressure sensing sensitivity.
Inventors:
WANG QINGHE (CN)
WANG DONGFANG (CN)
ZHOU BIN (CN)
ZHAO CE (CN)
SU TONGSHANG (CN)
CHENG LEILEI (CN)
ZHANG YANG (CN)
LI GUANGYAO (CN)
WANG DONGFANG (CN)
ZHOU BIN (CN)
ZHAO CE (CN)
SU TONGSHANG (CN)
CHENG LEILEI (CN)
ZHANG YANG (CN)
LI GUANGYAO (CN)
Application Number:
PCT/CN2019/087433
Publication Date:
November 21, 2019
Filing Date:
May 17, 2019
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
G01L1/16; G01L9/08
Foreign References:
| CN108731855A | 2018-11-02 | |||
| CN107946369A | 2018-04-20 | |||
| CN106684251A | 2017-05-17 | |||
| CN106293244A | 2017-01-04 | |||
| CN106887449A | 2017-06-23 | |||
| CN106104441A | 2016-11-09 | |||
| US20150155430A1 | 2015-06-04 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
Download PDF: