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Patent Searching and Data


Title:
PRESSURE SENSOR AND METHOD FOR MANUFACTURING PRESSURE SENSOR
Document Type and Number:
WIPO Patent Application WO/2011/055734
Kind Code:
A1
Abstract:
Disclosed is a pressure sensor (1) which comprises: a semiconductor substrate (10); insulating layers (21, 22, 23) that are laminated on the semiconductor substrate (10); a semiconductor layer (30) that is arranged on the semiconductor substrate (10) with the insulating layers (21, 23) sandwiched therebetween; and a cavity portion (13) that is provided between the semiconductor substrate (10) and the semiconductor layer (30). A region of the semiconductor layer (30), said region overlapping the cavity portion (13) when viewed in the lamination direction, forms a movable portion (31), and the cavity portion (13) is surrounded by the insulating layers (22, 23). Due to this configuration, the pressure sensor (1) can be produced more easily with higher accuracy.

Inventors:
NISHIKAGE HARUHIKO (JP)
FUJITA TOMA (JP)
Application Number:
PCT/JP2010/069550
Publication Date:
May 12, 2011
Filing Date:
November 04, 2010
Export Citation:
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Assignee:
ROHM CO LTD (JP)
NISHIKAGE HARUHIKO (JP)
FUJITA TOMA (JP)
International Classes:
G01L9/00; H01L29/84
Foreign References:
JPH06302834A1994-10-28
JPH09186347A1997-07-15
JPS63175482A1988-07-19
Attorney, Agent or Firm:
YOSHIDA Minoru et al. (JP)
Yoshida 稔 (JP)
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