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Title:
PRESSURE SENSOR
Document Type and Number:
WIPO Patent Application WO/2011/092563
Kind Code:
A1
Abstract:
Disclosed is a pressure sensor in which a pressure conversion section for converting pressure to an electrical signal and a signal processing circuit for processing the electrical signal obtained by the conversion performed by the pressure conversion section are formed on a single semiconductor substrate. The pressure conversion section has a diaphragm formed by partially reducing the thickness of the semiconductor substrate, and a plurality of piezo-resistance elements formed at the surface of the diaphragm. The signal processing circuit comprises a CMOS integrated circuit that is formed in a p-type conductivity region provided at the periphery of the diaphragm at the surface of the semiconductor substrate. The piezo-resistance elements are formed by forming an n-type conductivity region by diffusing an n-type impurity in the p-type conductivity region provided at the surface of the diaphragm and by diffusing a p-type impurity in the n-type conductivity region.

Inventors:
NIIMURA YUICHI (JP)
NOBE TAKESHI (JP)
NISIKAWA HIDEO (JP)
KATO FUMIHITO (JP)
Application Number:
PCT/IB2011/000081
Publication Date:
August 04, 2011
Filing Date:
January 21, 2011
Export Citation:
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Assignee:
PANASONIC ELEC WORKS CO LTD (JP)
NIIMURA YUICHI (JP)
NOBE TAKESHI (JP)
NISIKAWA HIDEO (JP)
KATO FUMIHITO (JP)
International Classes:
G01L9/00; H01L29/84
Foreign References:
JP2004109112A2004-04-08
JPH0897439A1996-04-12
JPH06207871A1994-07-26
JP2005156164A2005-06-16
JP2008190970A2008-08-21
JPH10274581A1998-10-13
JPH0887439A1996-04-02
Attorney, Agent or Firm:
FIRSTLAW LEE & KO (KR)
The first 廣 place Patent Law people (KR)
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Claims:



 
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