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Patent Searching and Data


Title:
PROCESS AND APPARATUS FOR PURIFYING SILICON
Document Type and Number:
WIPO Patent Application WO/2010/048885
Kind Code:
A1
Abstract:
Provided are a process and an apparatus for purifying silicon, wherein the process comprises the following steps: feeding an impurity-removing gas into a reaction chamber loaded with silicon powder, and evacuating the reaction chamber to keep the pressure of the reaction chamber in such a range that the impurity-removing gas can form a plasma; inputting energy into the said reaction chamber to ionize the impurity-removing gas to form a plasma; and removing the silicon powder. Compared with the conventional processes for purifying silicon, this process has the advantages of lower power consumption and less pollution.

Inventors:
LIU TIELIN (CN)
ZHOU GUOTAI (CN)
Application Number:
PCT/CN2009/074665
Publication Date:
May 06, 2010
Filing Date:
October 28, 2009
Export Citation:
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Assignee:
LIU TIELIN (CN)
ZHOU GUOTAI (CN)
International Classes:
C01B33/037; B01J8/00
Foreign References:
CN101011651A2007-08-08
CN1669630A2005-09-21
US5753567A1998-05-19
CN101007633A2007-08-01
US4379777A1983-04-12
Other References:
LUO, DA WEI ET AL.: "Technics Progress on the Purification of Solar Grade (SoG) Silicon by Plasma", FOUNDRY TECHNOLOGY, vol. 30, no. 7, July 2009 (2009-07-01), pages 945 - 948
LI, ZHONG ET AL.: "Plasma Enhanced Purification Experiment of Silicon Material", MICROFABRICATION TECHNOLOGY, no. 1, March 1996 (1996-03-01), pages 44 - 48
YIN, SHENG ET AL.: "Experimental Research on Purification of Silicon Powder Layer by Cold Plasma", ACTA ENERGIAE SOLARIS SINICA, vol. 21, no. 2, April 2000 (2000-04-01), pages 204 - 207
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (Bldg. A Winland International Center,No. 32 Xizhimen North Stree, Haidian District Beijing 2, CN)
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