PROCESS FOR BULK CRYSTAL GROWTH

Title:

PROCESS FOR BULK CRYSTAL GROWTH

Document Type and Number:

WIPO Patent Application WO/1996/015297

Kind Code:

A1

Abstract:

A process for producing a good-quality bulk single crystal in a high yield which comprises preparing a solution (12s) of the starting material in a solvent by using a large-diameter thin-sheet seed crystal (10) of a component other than the crystal to be grown, controlling the lower-side temperature of the solution (12s) (or the molten starting material (12m)) to be higher than the upper-side temperature thereof to thereby cause convection, keeping the above state for a given time to wash the surface of the seed crystal (10) by utilizing convection, and initiating crystal growth by, for example, the Bridgman method or the gradient freezing technique in such a manner that a temperature gradient will be realized on the surface of the seed crystal (10) by tilting the crystal (10) so that a crystal nucleus will be formed at the lowest-temperature site of the surface or that a minute recess or protrusion is formed in advance at one site of that surface so that the nucleus will be formed at that site.

Inventors:

ASAHI TOSHIAKI (JP)
ODA OSAMU (JP)
SATO KENJI (JP)

Application Number:

PCT/JP1995/002025

Publication Date:

May 23, 1996

Filing Date:

October 04, 1995

Export Citation:

Click for automatic bibliography generation Help

Assignee:

JAPAN ENERGY CORP (JP)
ASAHI TOSHIAKI (JP)
ODA OSAMU (JP)
SATO KENJI (JP)

International Classes:

C30B11/00; C30B11/14; C30B15/00; C30B15/36; (IPC1-7): C30B11/14; C30B15/36; C30B29/48

Foreign References:

JPS5869800A	1983-04-26
JPS6335349B2	1988-07-14
JPH01122998A	1989-05-16
JPH05310494A	1993-11-22
JPH05279165A	1993-10-26
JPH0340987A	1991-02-21
JPH07206597A	1995-08-08

Other References: