Title:
PROCESS CHAMBER AND CAPACITIVELY COUPLED PLASMA APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/062573
Kind Code:
A1
Abstract:
Provided are a process chamber and a capacitively coupled plasma apparatus. The process chamber comprises a chamber body, a lining, and a magnetic assembly, wherein the lining is arranged inside the chamber body and defines and forms a process area for processing a wafer; and the magnetic assembly is arranged outside the process area, and a magnetic field generated by the magnetic assembly can narrow the gap between the etching rate of a peripheral area of the wafer and the etching rate of a central area thereof during the processing process of the wafer.
Inventors:
WANG WENZHANG (CN)
CHEN PENG (CN)
DING PEIJUN (CN)
LIU FEIFEI (CN)
CHEN PENG (CN)
DING PEIJUN (CN)
LIU FEIFEI (CN)
Application Number:
PCT/CN2018/105968
Publication Date:
April 04, 2019
Filing Date:
September 17, 2018
Export Citation:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)
International Classes:
H01J37/32
Foreign References:
| CN1848376A | 2006-10-18 | |||
| CN103854945A | 2014-06-11 | |||
| CN107578977A | 2018-01-12 | |||
| CN207320060U | 2018-05-04 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
Download PDF:
Previous Patent: DATA PROCESSING METHOD, DEVICE AND SYSTEM
Next Patent: METADATA QUERY METHOD AND DEVICE
Next Patent: METADATA QUERY METHOD AND DEVICE