Title:
PROCESS FOR CONTINUOUSLY CASTING SILICON INGOTS
Document Type and Number:
WIPO Patent Application WO/2012/011159
Kind Code:
A1
Abstract:
Disclosed is a process for continuously casting silicon ingots by: introducing a silicon material into an electroconductive bottomless cooling crucible (7) that is arranged inside a chamber (1) while supplying an inert gas into the chamber (1); melting the silicon material through induction heating caused by an induction coil (8) surrounding the bottomless cooling crucible (7); and solidifying the molten silicon (12) while lowering same from the bottomless cooling crucible (7). In supplying the inert gas into the chamber (1), the inert gas is supplied above the molten silicon (12) and also to the lower section of the silicon ingot (3), and the inert gas supplied to the lower section is circulated around the outer periphery of the silicon ingot. Thus, it is possible to reduce contamination due to impurities in the outer periphery of the silicon ingot.
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Inventors:
NAITOU, Nobumasa (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 〒1058634, JP)
Application Number:
JP2010/006737
Publication Date:
January 26, 2012
Filing Date:
November 17, 2010
Export Citation:
Assignee:
SUMCO CORPORATION (2-1 Shibaura 1-chome, Minato-ku Tokyo, 34, 〒1058634, JP)
株式会社ＳＵＭＣＯ (〒34 東京都港区芝浦一丁目２番１号 Tokyo, 〒1058634, JP)
株式会社ＳＵＭＣＯ (〒34 東京都港区芝浦一丁目２番１号 Tokyo, 〒1058634, JP)
International Classes:
C01B33/02; B22D25/04
Attorney, Agent or Firm:
MORI, Michio et al. (M. MORI PATENT OFFICE, 17-23 Higashinaniwa-cho 5-chome, Amagasaki-sh, Hyogo 92, 〒6600892, JP)
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