Title:
PROCESS FOR FABRICATING NONVOLATILE STORAGE
Document Type and Number:
WIPO Patent Application WO/2010/087000
Kind Code:
A1
Abstract:
A process for fabricating a nonvolatile storage having a variable resistance layer where the resistance is varied by at least any one of an applied electric field and an applied current, and a first electrode for applying a voltage to the variable resistance layer. The process comprises a first conductive film deposition step for depositing a first conductive film to serve as the first electrode on a substrate, a variable resistance film deposition step for depositing a variable resistance film to serve as the variable resistance layer, a composition adjustment film deposition step for depositing a composition adjustment film having a composition different from the composition of the variable resistance film and containing at least one element contained in the variable resistance layer, and an anneal step for annealing the variable resistance film and the composition adjustment film.
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Inventors:
FUKUMIZU HIROYUKI (JP)
Application Number:
PCT/JP2009/051606
Publication Date:
August 05, 2010
Filing Date:
January 30, 2009
Export Citation:
Assignee:
TOSHIBA KK (JP)
FUKUMIZU HIROYUKI (JP)
FUKUMIZU HIROYUKI (JP)
International Classes:
H01L27/10; G11B9/04; H01L45/00; H01L49/00
Domestic Patent References:
| WO2008107941A1 | 2008-09-12 |
Foreign References:
| JP2007288016A | 2007-11-01 | |||
| JP2008218855A | 2008-09-18 | |||
| JP2008060091A | 2008-03-13 | |||
| JP2008072031A | 2008-03-27 | |||
| JP2009021524A | 2009-01-29 | |||
| JP2005064502A | 2005-03-10 |
Attorney, Agent or Firm:
HYUGAJI, MASAHIKO (JP)
Masahiko Hiugaji (JP)
Masahiko Hiugaji (JP)
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