Title:
A PROCESS OF IMAGING A DEEP ULTRAVIOLET PHOTORESIST WITH A TOP COATING AND MATERIALS THEREOF
Document Type and Number:
WIPO Patent Application WO2005088397
Kind Code:
A3
Abstract:
The present invention relates to a process for imaging , preferably deep ultraviolet (uv), photoresists with a topcoat using, preferably deep uv, immersion lithography. The invention further relates to a barrier coating composition comprising a polymer with at least one ionizable group having a pKa ranging from about -9 to about 11. The invention also relates to a process for imaging a photoresist with a (top) barrier coat to prevent contamination of the photoresist from environmental contaminants.
Inventors:
HOULIHAN FRANCIS M (US)
DAMMEL RALPH R (US)
ROMANO ANDREW R (US)
SAKAMURI RAJ (US)
DAMMEL RALPH R (US)
ROMANO ANDREW R (US)
SAKAMURI RAJ (US)
Application Number:
PCT/IB2005/000627
Publication Date:
June 29, 2006
Filing Date:
March 08, 2005
Export Citation:
Assignee:
AZ ELECTRONIC MATERIALS USA (US)
International Classes:
G03F7/09; G03C1/76; G03F7/11; G03F7/20
Foreign References:
US20030108815A1 | 2003-06-12 | |||
US6107006A | 2000-08-22 | |||
EP1319981A2 | 2003-06-18 | |||
US6057080A | 2000-05-02 |
Other References:
JAE CHANG JUNG ET AL: "Quencher gradient resist process for low k process UV lithography", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 5376, no. 1, 2004, pages 63 - 70, XP002372988, ISSN: 0277-786X
SATO M.: "TOK Resist & Material Development status for Immersion Lithography", WWW.SEMATECH.ORG/RESOURCES/LITHO/MEETINGS, 29 January 2004 (2004-01-29), XP002350074
SATO M.: "TOK Resist & Material Development status for Immersion Lithography", WWW.SEMATECH.ORG/RESOURCES/LITHO/MEETINGS, 29 January 2004 (2004-01-29), XP002350074
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