Title:
PROCESS FOR MAKING DENSE MIXED METAL Si3N4 TARGETS
Document Type and Number:
WIPO Patent Application WO2004024452
Kind Code:
A3
Abstract:
A composition and method for fabricating high-density Ta-Al-O, Ta-Si-N, and W-Si-N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si3N4, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.
Inventors:
SMATHERS DAVID B (US)
VALENT FRANCIS S (US)
REGAN MICHAEL J (US)
VALENT FRANCIS S (US)
REGAN MICHAEL J (US)
Application Number:
PCT/US2003/027145
Publication Date:
June 09, 2005
Filing Date:
August 27, 2003
Export Citation:
Assignee:
TOSOH SMD INC (US)
SMATHERS DAVID B (US)
VALENT FRANCIS S (US)
REGAN MICHAEL J (US)
HEWLETT PACKARD CO (US)
SMATHERS DAVID B (US)
VALENT FRANCIS S (US)
REGAN MICHAEL J (US)
HEWLETT PACKARD CO (US)
International Classes:
B32B9/00; B32B15/04; C04B35/64; C23C14/34; B41J; (IPC1-7): C23C14/34; B32B15/04; B32B9/00; C04B35/64
Domestic Patent References:
| WO1999003623A1 | 1999-01-28 |
Foreign References:
| US5234642A | 1993-08-10 | |||
| US5162272A | 1992-11-10 |
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