PROCESS FOR MANUFACTURE OF BONDED WAFER - Shin-Etsu Handotai Co., Ltd.

Title:

PROCESS FOR MANUFACTURE OF BONDED WAFER

Document Type and Number:

WIPO Patent Application WO/2006/129484

Kind Code:

A1

Abstract:

A process for the manufacture of a bonded wafer comprising the steps of: forming a oxide film on the surface of at least one of a base wafer and a bond wafer, intimately contacting the base wafer with the bond wafer through the oxide film; thermally treating the resulting product in an oxidative atmosphere to bond the base wafer and the bond wafer; grinding the rim of the bond wafer to a desired thickness to remove the rim; removing the unbonded area in the rim of the bond wafer by etching; and thinning the bond wafer to a desired thickness, the etching being performed using a mixed acid 30&ring C or lower which comprises at least hydrofluoric acid, nitric acid and acetic acid. In the process, the unbonded area in the rim of the bond wafer is etched and a bonded wafer can be manufatured at a high ratio of etch rate selectivity (R_Si/R_SiO2) of Si to SiO₂ without causing no metal contamination.

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Inventors:

Okabe, Keiichi c/o Nagano Denshi Co. Ltd. (1393, Yashir, Chikuma-shi Nagano 55, 38785, JP)
Miyazaki, Susumu c/o Nagano Denshi Co. Ltd. (1393, Yashir, Chikuma-shi Nagano 55, 38785, JP)

Application Number:

PCT/JP2006/309892

Publication Date:

December 07, 2006

Filing Date:

May 18, 2006

Export Citation:

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Assignee:

Shin-Etsu Handotai Co., Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku, Tokyo, 100-0004, JP)
Okabe, Keiichi c/o Nagano Denshi Co. Ltd. (1393, Yashir, Chikuma-shi Nagano 55, 38785, JP)
Miyazaki, Susumu c/o Nagano Denshi Co. Ltd. (1393, Yashir, Chikuma-shi Nagano 55, 38785, JP)

International Classes:

H01L21/02; H01L21/306; H01L27/12

Attorney, Agent or Firm:

Yoshimiya, Mikio (Uenosansei Bldg. 4F, 6-4 Motoasakusa 2-chom, Taito-ku Tokyo 41, 11100, JP)

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