PROCESS FOR PREPARING In�2?O�3?-SnO�2? PRECURSOR SOL AND PROCESS FOR PREPARING THIN FILM OF In�2?O�3?-SnO�2?

Title:

PROCESS FOR PREPARING In�2?O�3?-SnO�2? PRECURSOR SOL AND PROCESS FOR PREPARING THIN FILM OF In�2?O�3?-SnO�2?

Document Type and Number:

WIPO Patent Application WO/1998/054094

Kind Code:

A1

Abstract:

A process for preparing a transparent conductive thin film of In�2?O�3?-SnO�2? on the surface of a substrate of a plastic having poor heat resistance in addition to a glass or ceramic substrate. In the hydrolysis and polymerization of a solution containing an indium alkoxide and a tin alkoxide to prepare an In�2?O�3?-SnO�2? precursor sol, tr-s-butoxyindium or tri-t-butoxyindium is used as the indium alkoxide. Further, the addition of water to the alkoxide-containing solution is carried out at a temperature of -20 �C or below. The surface of the substrate is coated with the In�2?O�3?-SnO�2? precursor sol thus prepared to form a gel film. The gel film is irradiated with ultraviolet light at a wavelength of not more than 360 nm, or alternatively irradiated first with ultraviolet light at a wavelength of not more than 260 nm and then with laser beam at a wavelength of not more than 360 nm, thereby crystallizing the gel film to form a conductive thin film of In�2?O�3?-SnO�2? on the surface of the substrate.

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Inventors:

TOKI MOTOYUKI (JP)
FUKUI TOSHIMI (JP)
ASAKUMA NAOKO (JP)
FUJII TAKAMITSU (JP)

Application Number:

PCT/JP1998/002287

Publication Date:

December 03, 1998

Filing Date:

May 25, 1998

Export Citation:

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Assignee:

KRI INTERNATIONAL INC (JP)
TOKI MOTOYUKI (JP)
FUKUI TOSHIMI (JP)
ASAKUMA NAOKO (JP)
FUJII TAKAMITSU (JP)

International Classes:

C01G19/00; C03C17/25; C04B41/50; (IPC1-7): C01G19/00; C09D5/24; C30B29/22; G09F9/30; H01B13/00

Foreign References:

JPH08134382A	1996-05-28
JPH08253318A	1996-10-01
JPH01200593A	1989-08-11

Attorney, Agent or Firm:

Mamiya, Takeo (5 Higashinakamizu-cho, Nishioji Dori Gojo Sagaru, Ukyo-k, Kyoto-shi Kyoto-fu, JP)

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