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Patent Searching and Data


Title:
PROCESS FOR PREPARING TARGET MATERIAL FOR SUPERCONDUCTING FILM
Document Type and Number:
WIPO Patent Application WO/1989/004816
Kind Code:
A1
Abstract:
In preparing a target material for a superconducting film by hot press process, a vacuum atmosphere is replaced with an inert gas atmosphere containing 0.1 to 10 % by volume of oxygen and having a pressure of 1 to 100 Torr at a predetermined temperature ranging from 350 to 700�C in the step of raising the temperature, and a material to be sintered is held within said inert gas atmosphere for 1 to 10 hr, thereby preparing a target material having a homogeneous composition and freed from permanent set.

Inventors:
TAKESHITA TAKUO (JP)
SUGHIHARA TADASHI (JP)
Application Number:
PCT/JP1988/001148
Publication Date:
June 01, 1989
Filing Date:
November 15, 1988
Export Citation:
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Assignee:
MITSUBISHI METAL CORP (JP)
International Classes:
C01G1/00; C01G3/00; C04B35/00; C04B35/45; C04B35/645; C23C14/34; C04B41/87; C23C14/08; H01B12/00; H01B12/02; H01B13/00; H01L39/24; (IPC1-7): C04B35/00; C04B41/87; C23C14/08; H01B12/00; H01L39/12
Other References:
Physical Review Letters, Vol. 58, No. 9, (1987), C.W. CHU, et al (Superconductivity at 93K in a New Mixed-Phase Y-Ba-Cu-O Compound System at Ambient Pressure) p. 908-910
Japanese Journal of Applied Physics, Vol. 26, No. 5, (1987), M.KAWASAKI, et al (High Tc Yb-Ba-Cu-O Thin Films Deposited on Sintered YSZ Substrates by Sputtering), p. l738-l740
Japanese Journal of Applied Physics, Vol. 26, No. 7, (1987), Y. ENOMOTO, et al (Largely Anisotropic Superconducting Critical Current in Epitaxially Grown Ba2Y Cu3 07-y Thin Film) p. l1248-l1251
See also references of EP 0355165A4
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