Title:
PROCESS FOR PRODUCING CATALYST METAL LAYER AND PROCESS FOR PRODUCING GRAPHENE MATERIAL
Document Type and Number:
WIPO Patent Application WO/2013/129312
Kind Code:
A1
Abstract:
First, a quadrilateral substrate (12) comprising c-plane sapphire is prepared, and nickel is deposited as a catalyst metal on the entire upper surface of the substrate (12) to form a catalyst metal film (14) (see (a)). Next, the catalyst metal film (14) is patterned by lithography to form a catalyst metal film (16) having a given shape (see (b)). Subsequently, the temperature of the catalyst metal film (16) is elevated to 1,000ºC and kept at 1,000ºC for 20 minutes. The temperature of the catalyst metal film (16) is then lowered from 1,000ºC to 800ºC at a rate of 5 ºC/min and is kept at 800ºC for 15 hours. Thus, a catalyst metal layer (17) constituted of large grains is obtained (see (c)). Thereafter, a carbon source is supplied to the surface of the catalyst metal layer (17) to grow graphene, and the catalyst metal layer (17) is dissolved away with an acidic solution to take out a graphene material (10) (see (d) to (g)).
Inventors:
NARITSUKA SHIGEYA (JP)
MARUYAMA TAKAHIRO (JP)
MARUYAMA TAKAHIRO (JP)
Application Number:
PCT/JP2013/054762
Publication Date:
September 06, 2013
Filing Date:
February 25, 2013
Export Citation:
Assignee:
UNIV MEIJO (JP)
International Classes:
B01J23/755; B01J35/02; B01J37/08; C01B31/02
Domestic Patent References:
| WO2012086641A1 | 2012-06-28 |
Foreign References:
| JP2010275168A | 2010-12-09 | |||
| JP2011178644A | 2011-09-15 | |||
| JP2012020903A | 2012-02-02 |
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Itec international patent firm (JP)
Patent business corporation Itec international patent firm (JP)
Download PDF:
Claims: