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Title:
PROCESS FOR PRODUCING INDIUM-PHOSPHORUS SUBSTRATE, PROCESS FOR PRODUCING EPITAXIAL WAFER, INDIUM-PHOSPHORUS SUBSTRATE, AND EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2010/122821
Kind Code:
A1
Abstract:
A process for producing an InP substrate which can be inhibited from deteriorating not only in electrical properties but also in PL characteristics, a process for producing an epitaxial wafer, an InP substrate, and an epitaxial wafer. The process for producing an InP substrate includes the following steps: preparing an InP substrate (steps S1 to S3); cleaning the InP substrate with a sulfuric acid/hydrogen peroxide mixture (step S5); and after the step of cleaning with a sulfuric acid/hydrogen peroxide mixture (step S5), cleaning the InP substrate with phosphoric acid (step S6).

Inventors:
OKITA KYOKO (JP)
Application Number:
PCT/JP2010/050193
Publication Date:
October 28, 2010
Filing Date:
January 12, 2010
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
OKITA KYOKO (JP)
International Classes:
C30B29/40; C30B33/10; H01L21/205; H01L21/304
Foreign References:
JP2008244434A2008-10-09
JP2004311726A2004-11-04
JPH05267185A1993-10-15
JPH05166785A1993-07-02
JPS5413500A1979-01-31
JPS62252140A1987-11-02
Other References:
A.S. BARRIERE ET AL.: "Study of a chemical cleaning of InP(100) substrates by infrared absorption and nuclear reaction analysis", APPLIED SURFACE SCIENCE, vol. 64, no. ISS.3, 1 March 1999 (1999-03-01), pages 225 - 230, XP024428682
See also references of EP 2423356A4
Attorney, Agent or Firm:
NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)
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