Title:
PROCESS FOR PRODUCING LAYERED MEMBER AND LAYERED MEMBER
Document Type and Number:
WIPO Patent Application WO/2005/088666
Kind Code:
A1
Abstract:
A photoelectric surface member capable of enhancing of quantum efficiency. There is provided photoelectric surface member (1a) comprising a crystalline layer produced from a nitride semiconductor material, which is composed of nitride semiconductor crystal layer (10) wherein the direction from first face (101) to second face (102) is a negative c-polarity direction of crystal, adhesive layer (12) provided along the first face (101) of the nitride semiconductor crystal layer (10), and glass plate (14) adhesion fixed to the adhesive layer (12) so as to have the adhesive layer (12) interposed between the glass plate (14) and the nitride semiconductor crystal layer (10). The nitride semiconductor crystal layer (10) can be produced from substrate for crystal growth (50) whose main surface plane direction is (111).
Inventors:
Nihashi, Tokuaki c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Sumiya, Masatomo (KI-A, Parkwood 278-1, Tomitsuka-ch, Hamamatsu-shi Shizuoka 02, 43280, JP)
Hagino, Minoru c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Fuke, Shunro (3-40-8, Sanarudai Hamamatsu-shi, Shizuoka 21, 43280, JP)
Sumiya, Masatomo (KI-A, Parkwood 278-1, Tomitsuka-ch, Hamamatsu-shi Shizuoka 02, 43280, JP)
Hagino, Minoru c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Fuke, Shunro (3-40-8, Sanarudai Hamamatsu-shi, Shizuoka 21, 43280, JP)
Application Number:
PCT/JP2005/003879
Publication Date:
September 22, 2005
Filing Date:
March 07, 2005
Export Citation:
Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Hamamatsu-shi, Shizuoka 58, 43585, JP)
Nihashi, Tokuaki c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Sumiya, Masatomo (KI-A, Parkwood 278-1, Tomitsuka-ch, Hamamatsu-shi Shizuoka 02, 43280, JP)
Hagino, Minoru c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Fuke, Shunro (3-40-8, Sanarudai Hamamatsu-shi, Shizuoka 21, 43280, JP)
Nihashi, Tokuaki c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Sumiya, Masatomo (KI-A, Parkwood 278-1, Tomitsuka-ch, Hamamatsu-shi Shizuoka 02, 43280, JP)
Hagino, Minoru c/o Hamamatsu, Photonics K. K. (1126-1 Ichino-ch, Hamamatsu-shi Shizuoka 58, 43585, JP)
Fuke, Shunro (3-40-8, Sanarudai Hamamatsu-shi, Shizuoka 21, 43280, JP)
International Classes:
C23C16/01; C30B29/38; C30B29/40; H01J1/34; H01J9/12; H01J40/06; H01L21/205; C23C16/00; C30B29/10; H01J1/02; H01J9/12; H01J40/00; H01L21/02; (IPC1-7): H01J1/34; C23C16/01; C30B29/38; H01J40/06; H01L21/205
Attorney, Agent or Firm:
Hasegawa, Yoshiki (SOEI PATENT AND LAW FIRM, Ginza First Bldg. 10-6, Ginza 1-chom, Chuo-ku Tokyo 61, 10400, JP)
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