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Title:
PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM
Document Type and Number:
WIPO Patent Application WO/2008/018134
Kind Code:
A1
Abstract:
A process in which a polycrystalline semiconductor thin-film of high quality can be prepared by irradiation with laser beams of low energy density. There is provided a process for producing a polycrystalline semiconductor thin-film, characterized by forming an amorphous semiconductor layer of high hydrogen atom concentration (hydrogen atom concentration: 10 to 20%) on an insulating substrate and superimposing thereon an amorphous semiconductor layer of lower hydrogen atom concentration (hydrogen atom concentration: 5% or less) so that by irradiation with excimer laser beams of energy lower than in the prior art, the amorphous semiconductor layers are stably converted to polycrystalline semiconductor layers.

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Inventors:
MATSUO NAOTO
HEYA AKIRA
Application Number:
PCT/JP2006/315816
Publication Date:
February 14, 2008
Filing Date:
August 10, 2006
Export Citation:
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Assignee:
HYOGO PREFECTURE (JP)
MATSUO NAOTO
HEYA AKIRA
International Classes:
H01L21/20
Foreign References:
JPH04192321A1992-07-10
Other References:
HEYA A. ET AL.: "Teion ELA process ni oite a-Si Makuchu Suiso ga Kesshoka ni Ataeru Eikyo (Effect of Hydrogen in a-Si Films on Crystallization by Excimer Laser Anneal at Low Temperature Process)", IEICE TECHNICAL REPORT, vol. 106, no. 6, 10 April 2006 (2006-04-10), pages 23 - 26, XP003021028
HEYA A. ET AL.: "Teion Process no tameno Suiso Nodo Bunpu o Motsu a-Si Maku no Excimer Laser Anneal", DAI 53 KAI OYO BUTSURIGAKU KANKEI RENGO KOENKAI KOEN YOKOSHU, vol. 2, 22 March 2006 (2006-03-22), pages 887 + ABSTR. NR. 229-W-S, XP003021029
Attorney, Agent or Firm:
SUMIDA, Yoshihiro et al. (3rd Fl. Bo-eki Bldg.,123-1, Higashimachi,Chuo-k, Kobe-shi Hyogo 31, JP)
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