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Title:
PROCESS FOR PRODUCING RESIN FOR SEMICONDUCTOR LITHOGRAPHY
Document Type and Number:
WIPO Patent Application WO/2007/116614
Kind Code:
A1
Abstract:
This invention provides a process for producing a resin for semiconductor lithography that can suppress the occurrence of defects, particularly bridge mode defects. The process for producing a resin for semiconductor lithography comprises bringing a resin solution (R1) of a resin (A1) for semiconductor lithography, comprising constituent units (a2) containing a lactone-containing cyclic group, dissolved in an organic solvent (S1) into contact with a resin (A1’) having a solubility parameter in the range of 17 to 20 (J/cm3)1/2 and a specific surface area in the range of 0.005 to 1 m2/g.

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Inventors:
HIRANO ISAO (JP)
IWAI TAKESHI (JP)
Application Number:
PCT/JP2007/053041
Publication Date:
October 18, 2007
Filing Date:
February 20, 2007
Export Citation:
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Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
HIRANO ISAO (JP)
IWAI TAKESHI (JP)
International Classes:
C08F20/28; C08F6/10; G03F7/039
Domestic Patent References:
WO2003082933A12003-10-09
Foreign References:
JP2007051299A2007-03-01
JP2006274071A2006-10-12
JP2006225517A2006-08-31
JP2006137829A2006-06-01
JP2005189789A2005-07-14
Attorney, Agent or Firm:
TANAI, Sumio et al. (Yaesu Chuo-ku Tokyo, 53, JP)
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