Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PROCESS FOR PRODUCTION OF ACYLATED DERIVATIVE OF EPIGALLOCATECHIN GALLATE
Document Type and Number:
WIPO Patent Application WO/2007/105280
Kind Code:
A1
Abstract:
Disclosed is a process for producing a novel acylated epigallocatechin gallate derivative in which an acyl group is introduced selectively and efficiently to epigallocatechin gallate. A process for producing an acylated derivative of epigallocatechin gallate comprising the step of acylating epigallocatechin gallate, the acylating step comprising performing an enzymatic reaction with a lipase in an organic solvent using epigallocatechin gallate and an acyl group donor as substrates to acylate the epigallocatechin gallate. As the acyl group donor, vinyl carboxylate can be used, for example.

More Like This:
JPS63203676NOVEL SUBSTANCE KR2827
JPH0779682INDUSTRIAL APPLICABILITY: Biologically pure culture of microorganism, lactone production method, diol production method, compound production method, and cyclic ether production method.
Inventors:
KAIHATSU KUNIHIRO
KATO NOBUO
KOBE TAKAYOSHI
FULLER STEPHEN D
Application Number:
PCT/JP2006/304788
Publication Date:
September 20, 2007
Filing Date:
March 10, 2006
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
UNIV OSAKA (JP)
UNIV OXFORD (GB)
KAIHATSU KUNIHIRO
KATO NOBUO
KOBE TAKAYOSHI
FULLER STEPHEN D
International Classes:
C12P17/06; C07D311/62
Foreign References:
CN1448395A2003-10-15
JP2001226276A2001-08-21
JPH08259555A1996-10-08
Other References:
TANAKA T. ET AL.: "SYNTHESIS AND ANTIOXIDANT ACTIVITY OF NOVEL AMPHIPATHIC DERIVATIVES OF TEA POLYPHENOL", BIOORGANIC & MEDICINAL CHEMISTRY LETTERS, vol. 8, no. 14, 21 July 1998 (1998-07-21), pages 1801 - 1806, XP004137134
Attorney, Agent or Firm:
TSUJIMARU, Koichiro et al. (Kyoto Research Park134, Chudoji Minami-machi,Shimogyo-ku, Kyoto-shi, Kyoto 13, JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: PORTABLE COMMUNICATION APPARATUS

Next Patent: PROCESS FOR PRODUCING COMPOUND SEMICONDUCTOR DEVICE AND ETCHANT