Title:
PROCESS FOR PRODUCTION OF ALUMINUM NITRIDE CONTAINING MATERIALS
Document Type and Number:
WIPO Patent Application WO/2008/001661
Kind Code:
A1
Abstract:
A process for producing aluminum nitride containing materials at a low manufacturing
cost, which comprises the first heat treatment step of positioning a catalyst
element having a smaller free energy of formation of nitride than that of aluminum
in molten aluminum heated in a nitrogen atmosphere to form a material containing
aluminum nitride through the nitriding with the catalyst element acting as catalyst.
The catalyst element is at least one selected from the group consisting of boron,
calcium, silicon, iron, molybdenum, chromium, vanadium, magnesium, manganese,
indium, gallium, tantalum, hafnium, and thorium.
Inventors:
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
清宮 義博 (〒06 東京都日野市程久保２－１－１ 明星大学 理工学部内 Tokyo, 1918506, JP)
OTSUKA, Kanji (2-1074-38, Kohan Higashiyamato-sh, Tokyo 02, 2070002, JP)
清宮 義博 (〒06 東京都日野市程久保２－１－１ 明星大学 理工学部内 Tokyo, 1918506, JP)
OTSUKA, Kanji (2-1074-38, Kohan Higashiyamato-sh, Tokyo 02, 2070002, JP)
Application Number:
JP2007/062404
Publication Date:
January 03, 2008
Filing Date:
June 20, 2007
Export Citation:
Assignee:
TAMA-TLO Ltd. (HACHIOJI SQUARE BLDG. 11F, 9-1 ASAHI-CHO HACHIOJI-SH, Tokyo 83, 1920083, JP)
タマティーエルオー株式会社 (〒83 東京都八王子市旭町９番１号 八王子スクエアビル１１階 Tokyo, 1920083, JP)
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
清宮 義博 (〒06 東京都日野市程久保２－１－１ 明星大学 理工学部内 Tokyo, 1918506, JP)
タマティーエルオー株式会社 (〒83 東京都八王子市旭町９番１号 八王子スクエアビル１１階 Tokyo, 1920083, JP)
SEIMIYA, Yoshihiro (School of Science and Engineering 2-1-1, Hodokubo, Hino-sh, Tokyo 06, 1918506, JP)
清宮 義博 (〒06 東京都日野市程久保２－１－１ 明星大学 理工学部内 Tokyo, 1918506, JP)
International Classes:
C01B21/072; B22F1/00; C22C1/05; C22C29/16
Attorney, Agent or Firm:
YANASE, Mutsuyasu et al. (PATENT ATTORNEYS SHINPO, 8th Floor UK Building,1-32-14, Takadanobaba,Shinjuku-k, Tokyo 75, 1690075, JP)
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