PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD

WIPO Patent Application WO/2011/138958

A1

A process for producing a functional device, comprising the following steps in this order: a functional solid material precursor layer formation step of applying a functional liquid material on a base material to form a layer of a precursor of a functional solid material (i.e., a precursor layer); a drying step of heating the precursor layer at a first temperature falling within the range from 80 to 250°C to decrease the flowability of the precursor layer previously; an embossing step of embossing the precursor layer while heating the precursor layer at a second temperature falling within the range from 80 to 300°C to form an embossed structure on the precursor layer; and a functional solid material layer formation step of heating the precursor layer at a third temperature that is higher than the second temperature to form a functional solid material layer from the precursor layer.

SHIMODA TATSUYA (JP)
TOKUMITSU EISUKE (JP)
MIYASAKO TAKAAKI (JP)
KANEDA TOSHIHIKO (JP)

PCT/JP2011/060581

November 10, 2011

May 06, 2011

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JAPAN SCIENCE & TECH AGENCY (JP)
SHIMODA TATSUYA (JP)
TOKUMITSU EISUKE (JP)
MIYASAKO TAKAAKI (JP)
KANEDA TOSHIHIKO (JP)

H01L21/336; B29C59/02; B41J2/16; H01L21/288; H01L21/316; H01L21/3205; H01L21/368; H01L29/786; H01L41/22; H01L41/318; H01L41/33

JP2003051262A	2003-02-21
JP2007042689A	2007-02-15
JP2003151362A	2003-05-23
JP2008091904A	2008-04-17
JP2009166385A	2009-07-30
JPH07156414A	1995-06-20

KOUNO, HIROAKI (JP)
Hiroaki Kono (JP)

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