Title:
PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD
Document Type and Number:
WIPO Patent Application WO/2011/138958
Kind Code:
A1
Abstract:
A process for producing a functional device, comprising the following steps in this order: a functional solid material precursor layer formation step of applying a functional liquid material on a base material to form a layer of a precursor of a functional solid material (i.e., a precursor layer); a drying step of heating the precursor layer at a first temperature falling within the range from 80 to 250°C to decrease the flowability of the precursor layer previously; an embossing step of embossing the precursor layer while heating the precursor layer at a second temperature falling within the range from 80 to 300°C to form an embossed structure on the precursor layer; and a functional solid material layer formation step of heating the precursor layer at a third temperature that is higher than the second temperature to form a functional solid material layer from the precursor layer.
Inventors:
SHIMODA, Tatsuya (1-50, Asahidai Nomi-sh, Ishikawa 11, 〒9231211, JP)
下田 達也 (〒11 石川県能美市旭台１－５０ Ishikawa, 〒9231211, JP)
TOKUMITSU, Eisuke (2-17-50-1702, Akasaka Minato-k, Tokyo 52, 〒1070052, JP)
▲徳▼光 永輔 (〒52 東京都港区赤坂２－１７－５０－１７０２ Tokyo, 〒1070052, JP)
下田 達也 (〒11 石川県能美市旭台１－５０ Ishikawa, 〒9231211, JP)
TOKUMITSU, Eisuke (2-17-50-1702, Akasaka Minato-k, Tokyo 52, 〒1070052, JP)
▲徳▼光 永輔 (〒52 東京都港区赤坂２－１７－５０－１７０２ Tokyo, 〒1070052, JP)
Application Number:
JP2011/060581
Publication Date:
November 10, 2011
Filing Date:
May 06, 2011
Export Citation:
Assignee:
JAPAN SCIENCE AND TECHNOLOGY AGENCY (1-8 Honcho 4-chome, Kawaguchi-shi Saitama, 12, 〒3320012, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町四丁目１番８号 Saitama, 〒3320012, JP)
SHIMODA, Tatsuya (1-50, Asahidai Nomi-sh, Ishikawa 11, 〒9231211, JP)
下田 達也 (〒11 石川県能美市旭台１－５０ Ishikawa, 〒9231211, JP)
TOKUMITSU, Eisuke (2-17-50-1702, Akasaka Minato-k, Tokyo 52, 〒1070052, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町四丁目１番８号 Saitama, 〒3320012, JP)
SHIMODA, Tatsuya (1-50, Asahidai Nomi-sh, Ishikawa 11, 〒9231211, JP)
下田 達也 (〒11 石川県能美市旭台１－５０ Ishikawa, 〒9231211, JP)
TOKUMITSU, Eisuke (2-17-50-1702, Akasaka Minato-k, Tokyo 52, 〒1070052, JP)
International Classes:
H01L21/336; B29C59/02; B41J2/16; H01L21/288; H01L21/316; H01L21/3205; H01L21/368; H01L29/786; H01L41/22
Attorney, Agent or Firm:
KOUNO, Hiroaki (Suehiro-center Bldg. 7F, 4-8 Yorikimachi, Kita-ku, Osaka-sh, Osaka 36, 〒5300036, JP)
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Claims:
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