Title:
PROCESSING METHOD AND PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2017/141918
Kind Code:
A1
Abstract:
[Problem] To provide a processing method and a processing apparatus capable of realizing high-efficiency, high-precision processing with a simple configuration, using dry polishing for processing diamonds, etc. [Solution] A processing apparatus 1 has a sapphire surface plate 2, and a specimen holder 4 for holding a single-crystal diamond 3. The processing apparatus 1 also has an ozone supply unit 5 for supplying ozone gas to the contact site of the sapphire surface plate 2 and the single-crystal diamond 3.
Inventors:
KUBOTA AKIHISA (JP)
Application Number:
PCT/JP2017/005372
Publication Date:
August 24, 2017
Filing Date:
February 14, 2017
Export Citation:
Assignee:
NAT UNIV CORP KUMAMOTO UNIV (JP)
International Classes:
H01L21/304; B24B1/00
Domestic Patent References:
| WO2014034921A1 | 2014-03-06 |
Foreign References:
| JP2008136983A | 2008-06-19 | |||
| JP2008060453A | 2008-03-13 | |||
| JPH10189544A | 1998-07-21 |
Other References:
AKIHISA KUBOTA ET AL.: "Smoothing of the diamond substrate by ultraviolet assisted polishing -Advantage of supplying ozone gas", 2015 JSPE AUTUMN CONFERENCE GAKUJUTSU KOENKAI KOEN RONBUNSHU, vol. 2015, no. L39, 20 August 2015 (2015-08-20), pages 715 - 716
TAKESHI SAKAMOTO ET AL.: "Ultraviolet-assisted polishing of 4 inch SiC substrate", JOURNAL OF THE JAPAN SOCIETY OF GRIDING ENGINEERS, vol. 58, no. 4, April 2014 (2014-04-01), pages 235 - 240, XP055410508, ISSN: 0914-2703
TAKESHI SAKAMOTO ET AL.: "Ultraviolet-assisted polishing of 4 inch SiC substrate", JOURNAL OF THE JAPAN SOCIETY OF GRIDING ENGINEERS, vol. 58, no. 4, April 2014 (2014-04-01), pages 235 - 240, XP055410508, ISSN: 0914-2703
Attorney, Agent or Firm:
ARIYOSHI Shuichiro et al. (JP)
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