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Patent Searching and Data


Title:
PROCESSING METHOD AND PROCESSOR
Document Type and Number:
WIPO Patent Application WO/2002/082521
Kind Code:
A1
Abstract:
When process gas is supplied into a chamber (30) at a specified flow rate and a wafer W is processed in the chamber (30), flow rate of process gas is self-diagnosed by a self-diagnosis circuit in a flow rate controller (11) every time when the wafer W is processed with the process gas utilizing the time for replac a processed wafer W with a wafer W to be processed effectively. Since the flow rate controller (11) can be self-diagnosed on a wafer basis without interrupting the processing operation of the wafer W, throughput of processing operation is not lowered.

Inventors:
Takahashi, Eiji c/o TOKYO ELECTRON AT LIMITED (650 Mitsuzawa, Hosaka-ch, Nirasaki-shi Yamanashi, 407-0192, JP)
Mizusawa, Kenetsu c/o TOKYO ELECTRON AT LIMITED (650 Mitsuzawa, Hosaka-ch, Nirasaki-shi Yamanashi, 407-0192, JP)
Hirose, Jun c/o TOKYO ELECTRON AT LIMITED (2381-1 Kitagejo, Fujii-ch, Nirasaki-shi Yamanashi, 407-8511, JP)
Application Number:
PCT/JP2002/002539
Publication Date:
October 17, 2002
Filing Date:
March 18, 2002
Export Citation:
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Assignee:
TOKYO ELECTRON LIMITED (3-6 Akasaka 5-chome, Minato-ku, Tokyo, 107-8481, JP)
Takahashi, Eiji c/o TOKYO ELECTRON AT LIMITED (650 Mitsuzawa, Hosaka-ch, Nirasaki-shi Yamanashi, 407-0192, JP)
Mizusawa, Kenetsu c/o TOKYO ELECTRON AT LIMITED (650 Mitsuzawa, Hosaka-ch, Nirasaki-shi Yamanashi, 407-0192, JP)
Hirose, Jun c/o TOKYO ELECTRON AT LIMITED (2381-1 Kitagejo, Fujii-ch, Nirasaki-shi Yamanashi, 407-8511, JP)
International Classes:
G01F1/00; C23C16/52; G01F1/42; G01F11/28; G01F15/04; G01F25/00; G05B23/02; G05D7/06; G01F1/00; C23C16/52; G01F1/34; G01F11/00; G01F15/00; G01F25/00; G05B23/02; G05D7/06; (IPC1-7): H01L21/3065; G01F1/00; G05D7/06; H01L21/205
Attorney, Agent or Firm:
Suyama, Saichi (Kanda Higashiyama Bldg, 1 Kandata-cho 2-chom, Chiyoda-ku Tokyo, 101-0046, JP)
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