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Patent Searching and Data


Title:
PROCESSING METHOD AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2007/049510
Kind Code:
A1
Abstract:
Disclosed is a processing method which enables to remove an oxide film from an Si layer without adversely affecting portions other than the oxide film adhering to the Si layer, and also enables to surely form an SiGe layer having good film quality without coarsening the crystal structure of the Si layer surface after removal of the oxide film. Also disclosed is a recording medium. Specifically disclosed is a processing method wherein an oxide film formed on the surface of an Si layer is removed and an SiGe layer is then formed on the exposed Si layer surface. In this processing method, a gas containing a halogen element and a basic gas are supplied to the Si layer surface so that the oxide film formed on the Si layer surface is chemically reacted with the gas containing a halogen element and the basic gas, thereby transforming the oxide film into a reaction product. The reaction product is then heated and removed, and after that an SiGe layer is formed on the exposed Si layer surface.

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Inventors:
MURAKI, Yusuke (650 Mitsuzawa Hosaka-cho, Nirasaki-sh, Yamanashi 92, 4070192, JP)
村木 雄介 (〒92 山梨県韮崎市穂坂町三ツ沢650番地 東京エレクトロン九州株式会社内 Yamanashi, 4070192, JP)
TOZAWA, Shigeki (650 Mitsuzawa Hosaka-cho, Nirasaki-sh, Yamanashi 92, 4070192, JP)
Application Number:
JP2006/320928
Publication Date:
May 03, 2007
Filing Date:
October 20, 2006
Export Citation:
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Assignee:
TOKYO ELECTRON LIMITED (3-6 Akasaka 5-chome, Minato-ku Tokyo, 81, 1078481, JP)
東京エレクトロン株式会社 (〒81 東京都港区赤坂五丁目3番6号 Tokyo, 1078481, JP)
MURAKI, Yusuke (650 Mitsuzawa Hosaka-cho, Nirasaki-sh, Yamanashi 92, 4070192, JP)
村木 雄介 (〒92 山梨県韮崎市穂坂町三ツ沢650番地 東京エレクトロン九州株式会社内 Yamanashi, 4070192, JP)
International Classes:
H01L21/3065; H01L21/205; H01L21/306; H01L29/78
Foreign References:
JP2005203407A
JP2004343094A
JPH08195381A
JPH06224513A
Attorney, Agent or Firm:
HAGIWARA, Yasushi et al. (Hazuki International, Shinjuku Akebonobashi Building 1-12, Sumiyoshi-cho, Shinjuku-k, Tokyo 65, 1620065, JP)
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