Title:
PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/118532
Kind Code:
A1
Abstract:
Disclosed is a processing method which can achieve a high processing rate, and is capable of making a surface smooth. In order to achieve this an SiC substrate (8) is arranged in a potassium hydroxide solution (2) containing hydrogen peroxide, and ultraviolent radiation is irradiated on the surface of the SiC substrate (8). An SiO2 layer (9) is formed on the surface of the SiC substrate (8) due to the irradiation of ultraviolet radiation, and this SiO2 layer (9) is chemically removed by means of the potassium hydroxide solution, and also removed by a synthetic quartz surface plate (3a).
Inventors:
KUBOTA Akihisa (39-1 Kurokami 2-chome, Kumamoto-sh, Kumamoto 55, 〒8608555, JP)
久保田 章亀 (〒55 熊本県熊本市黒髪２丁目３９番１号 国立大学法人熊本大学内 Kumamoto, 〒8608555, JP)
久保田 章亀 (〒55 熊本県熊本市黒髪２丁目３９番１号 国立大学法人熊本大学内 Kumamoto, 〒8608555, JP)
Application Number:
JP2011/056597
Publication Date:
September 29, 2011
Filing Date:
March 18, 2011
Export Citation:
Assignee:
NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY (39-1, Kurokami 2-chome Kumamoto-sh, Kumamoto 55, 〒8608555, JP)
国立大学法人 熊本大学 (〒55 熊本県熊本市黒髪２丁目３９番１号 Kumamoto, 〒8608555, JP)
KUBOTA Akihisa (39-1 Kurokami 2-chome, Kumamoto-sh, Kumamoto 55, 〒8608555, JP)
国立大学法人 熊本大学 (〒55 熊本県熊本市黒髪２丁目３９番１号 Kumamoto, 〒8608555, JP)
KUBOTA Akihisa (39-1 Kurokami 2-chome, Kumamoto-sh, Kumamoto 55, 〒8608555, JP)
International Classes:
H01L21/306; B24B1/00; H01L21/304
Attorney, Agent or Firm:
ARIYOSHI Shuichiro (Tenjin Twin Building 6th Floor, 6-8 Tenjin 1-chome, Chuo-ku, Fukuoka-sh, Fukuoka 01, 〒8100001, JP)
Claims:
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