Title:
PROCESSING SOLUTION AND PATTERN FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/057225
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a processing solution for resist film patterning and a pattern forming method that can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern, and the occurrence of penetration failures in a resist C/H pattern. Provided is a processing solution for resist film patterning which is used for developing and/or cleaning a resist film obtained from an active ray-sensitive or a radiation-sensitive composition and contains organic solvents, the processing solution containing a first organic solvent having a relative dielectric constant of 4.0 or less, and a second organic solvent having a relative dielectric constant of 6.0 or greater.
Inventors:
HIRANO SHUJI (JP)
TSUBAKI HIDEAKI (JP)
TSUCHIHASHI TORU (JP)
NIHASHI WATARU (JP)
YAMAMOTO KEI (JP)
TSUBAKI HIDEAKI (JP)
TSUCHIHASHI TORU (JP)
NIHASHI WATARU (JP)
YAMAMOTO KEI (JP)
Application Number:
PCT/JP2016/078168
Publication Date:
April 06, 2017
Filing Date:
September 26, 2016
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/32; G03F7/038; G03F7/039; G03F7/20; H01L21/027
Foreign References:
| JP2010256858A | 2010-11-11 | |||
| JP2011065105A | 2011-03-31 | |||
| JPH0566570A | 1993-03-19 | |||
| JPS58106536A | 1983-06-24 | |||
| JPS5882244A | 1983-05-17 | |||
| JPS5559459A | 1980-05-02 | |||
| JP2013117701A | 2013-06-13 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
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