TECHNICAE FIEED

[1] Embodiments of the present disclosure relate to a processing system, a carrier for transporting a substrate in a processing system and a method for transporting a carrier. Embodiments of the present disclosure particularly relate to a carrier for transporting a substrate in a material deposition system.

BACKGROUND

[2] Techniques for layer deposition on a substrate include, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD) and thermal evaporation. Coated substrates may be used in several applications and in several technical fields. For instance, substrates for displays can be coated by a PVD process, including substrates for high-density displays. Some applications include insulating panels, substrates with TFTs, color filters or the like. A coated substrate, such as a substrate for a display, may include one or more layers of a material situated between two electrodes that are all deposited on a substrate.

[3] In order to process a substrate in a processing system, substrates are transported through subsequent processing chambers of the processing system, such as deposition chambers and optionally further processing chambers, e.g., cleaning chambers and/or etching chambers, wherein processing aspects are subsequently conducted in the processing chambers such that a plurality of substrates can continuously or quasi-continuously be processed in the in-line processing system. The substrates are loaded onto carriers that are transported through the processing system.

[4] In light of the above, an improvement of carriers is beneficial.

SUMMARY

[5] According to an aspect, a carrier for transporting a substrate in a processing system is provided. The carrier includes a substrate support surface and a chuck assembly, the chuck assembly being configured to hold the substrate at the substrate support surface in a vacuum mode and in an electrostatic mode.

[6] According to a further aspect, a carrier for transporting a substrate in a processing system is provided. The carrier includes a substrate support surface and a chuck assembly. The chuck assembly includes an electrode assembly adjacent to the substrate support surface and a plurality of openings in the substrate support surface connected to a gas conduit.

[7] According to a further aspect, a processing system for processing a substrate in a vacuum chamber is provided. The processing system includes a loading station, a vacuum processing chamber, and a load lock chamber between the loading station and the vacuum processing chamber. The loading station is configured for vertical loading of the substrate on a carrier according to embodiments described herein. The processing system further includes a vacuum generation device to hold the substrate in a vacuum mode on the substrate support surface.

[8] According to a further aspect, a method for transporting a substrate in a processing system is provided. The method includes providing a vacuum to a substrate support surface of a carrier for attracting a substrate, loading the substrate on the substrate support surface of the carrier, and providing electrostatic forces to the substrate with a chuck assembly.

[9] Embodiments are also directed at apparatuses for carrying out the disclosed method and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

[10] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following: FIG. 1 shows a schematic cross-sectional view of a carrier according to embodiments described herein;

FIG. 2A shows a schematic front view of a carrier according to embodiments described herein;

FIG. 2B shows a schematic front view of a carrier according to embodiments described herein;

FIG. 3 shows a schematic view of a processing system for processing a substrate according to embodiments described herein; and

FIG. 4 shows a flow chart of a method of transporting a substrate in a processing system according to embodiments described herein.

DETAILED DESCRIPTION OF EMBODIMENTS

[11] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[12] Carriers can be used in a processing system, such as a vacuum deposition system, for holding and transporting substrates within a vacuum chamber of the processing system. As an example, one or more material layers can be deposited on the substrate while the substrate is supported by the carrier.

[13] Supporting a substrate with a carrier for substrate processing has the advantage of reduced glass breakage, for example, for transporting a substrate through a processing system. For example, the substrate may be held by the carrier at a rear side i.e. the side of the substrate which does not face the deposition source. The front side of the substrate i.e. the side of the substrate facing the deposition source is not covered by e.g. holding arrangements of the carrier, allowing for the material to be deposited to reach areas of the substrate being hard to reach otherwise.

[14] In some applications, carriers may include electrostatic chucks for holding the substrate at a rear side. When loading the substrate onto the carrier, the substrate may be pressed onto the electrostatic chuck until electrostatic forces are sufficiently established. Additionally, when unloading the substrate from the carrier, electrostatic forces counteract the removal of the substrate.

[15] Therefore, a carrier facilitating loading and unloading of a substrate is beneficial.

[16] According to an aspect of the present disclosure, a carrier for transporting a substrate in a processing system is provided. The carrier includes a substrate support surface and a chuck assembly, the chuck assembly being configured to hold the substrate at the substrate support surface in a vacuum mode and in an electrostatic mode.

[17] According to an aspect of the present disclosure, a carrier for transporting a substrate in a processing system is provided. The carrier includes a substrate support surface and a chuck assembly. The chuck assembly includes an electrode assembly adjacent to the substrate support surface and a plurality of openings in the substrate support surface connected to a gas conduit.

[18] The term“adjacent to” as used herein may be understood as an element being configured to provide force(s). For example, the electrode assembly may be configured to provide force(s) to the substrate like e.g. electrostatic forces. Further, the term“adjacent to” may be understood as an element providing force(s). For example, the electrode assembly may provide forces to the substrate like e.g. electrostatic forces. The forces may be provided at the substrate support surface to hold the substrate at the substrate support surface.

[19] FIG. 1 shows a schematic cross-sectional view of a carrier 100 according to embodiments described herein. According to embodiments, the carrier 100 is configured for transporting a substrate in a processing system. The carrier 100 includes a substrate support surface 142 for supporting the substrate and a chuck assembly 120. The chuck assembly 120 is configured to hold the substrate at the substrate support surface in a vacuum mode and in an electrostatic mode. The chuck assembly may include an electrode assembly 125 for providing electrostatic forces to the substrate. For example, an electrostatic field may be provided by the electrode assembly 125 to act on the substrate for holding the substrate. A substrate may be transported through a processing system while held by the electrostatic field.

[20] According to embodiments described herein, the carrier 100 includes a substrate support surface 142. For example, a substrate to be carried through a processing system may be held at the substrate support surface 142 of the carrier. The substrate may be held at the substrate support surface by electrostatic forces. For loading of the substrate, the substrate may be held at the substrate support surface by vacuum chucking. According to embodiments, the carrier may include a plurality of openings 112 in the substrate support surface 142. The plurality of openings may be connected to the gas conduit 110. The gas conduit may be optionally connected to a gas supply. The gas conduit may be connected to a vacuum generation device 150. The gas conduit may be connected to a valve 160. The valve may be arranged between the gas conduit and the vacuum generation device 150 and/or the gas supply. The gas conduit may include a plurality of channels 116. Each of the channels of the plurality of channels 116 may open into one of the plurality of openings 112.

[21] According to embodiments described herein, the chuck assembly may be configured to hold the substrate at the substrate support surface in an electrostatic mode.“Electrostatic mode” as used herein may be understood as providing electrostatic forces to the chuck assembly for holding the substrate at the substrate support surface. The electrode assembly i.e. the plurality of electrodes may provide electrostatic forces.

[22] According to embodiments described herein, the carrier may include at least one non-conductive area. The at least one non-conductive area may be made of a dielectric material. Particularly, the dielectric may be made of a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or an equivalent material, but may be made of such materials as polyimide. The electrode assembly 125 may be embedded in the at least one non-conductive area or provided on the side of the non-conductive area opposite the substrate support surface.

[23] According to some embodiments, which can be combined with other embodiments described herein, the carrier 100 may include one or more voltage sources configured to apply one or more voltages to the plurality of electrodes 122. In some implementations, the one or more voltage sources are configured to ground at least some electrodes of the plurality of electrodes 122. As an example, the one or more voltage sources can be configured to apply a first voltage having a first polarity, a second voltage having a second polarity, and/or ground to the plurality of electrodes 122. According to some embodiments, each electrode, every second electrode, every third electrode or every fourth electrode of the plurality of electrodes can be connected to a separate voltage source. The term“polarity” refers to an electric polarity, i.e., negative (-) and positive (+). As an example, the first polarity can be the negative polarity and the second polarity can be the positive polarity, or the first polarity can be the positive polarity and the second polarity can be the negative polarity.

[24] According to embodiments, a controller 130 can be configured to control the one or more voltage sources for applying the one or more voltages and/or ground to the electrode assembly 125. In some implementations, the controller 130 can be integrated into the one or more voltage sources, or vice versa. In further implementations, the controller 130 can be provided as a separate entity connected to the one or more voltage sources, for example, via a cable connection and/or a wireless connection. The controller 130 may be configured to regulate the chuck assembly i.e. the controller may be configured to provide a vacuum mode and/or the electrostatic mode. The controller 130 may be configured to regulate the valve 160.

[25] According to embodiments that can be combined with any other embodiment described herein, the chuck assembly may be configured to hold the substrate at the substrate support surface in a vacuum mode.“Vacuum mode” as used herein may be understood as providing a vacuum to the chuck assembly for holding the substrate at the substrate support surface. For example, the substrate support surface may include a plurality of openings through which the vacuum may be provided to the chuck assembly for holding the substrate at the substrate support surface.

[26] According to embodiments, the electrostatic mode may be provided independently of the vacuum mode. Additionally or alternatively, the chuck assembly may be in a vacuum mode when the electrostatic mode is started. Accordingly, electrostatic forces may act on the substrate being held by the vacuum.

[27] According to embodiments that can be combined with any other embodiment described herein, the vacuum mode and the electrostatic mode may overlap i.e. the chuck assembly may hold the substrate at the substrate support surface in the vacuum mode while the electrostatic mode may be started. Once the electrostatic mode is set up the vacuum mode may be stopped or turned off. Accordingly, the vacuum mode may assist the electrostatic mode, e.g. the vacuum mode can synergize the electrostatic mode. [28] Advantageously, holding the substrate at the substrate support surface in the vacuum mode can bridge the time during which the electrostatic mode is set up. For example, establishing the electrostatic mode may take some time to generate electrostatic forces sufficient to hold the substrate at the substrate support surface of the carrier. It is thus beneficial to provide the vacuum mode to the chuck assembly to avoid and/or prevent an unwanted detachment of the substrate.

[29] According to embodiments described herein, the carrier may be oriented substantially vertically. Accordingly, the substrate may be transported through the processing system in a substantially vertical orientation.

[30] As used throughout the present disclosure,“substantially vertical” is understood particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction or orientation of ±20° or below, e.g. of ±10° or below. This deviation can be provided for example because a substrate carrier with some deviation from the vertical orientation might result in a more stable substrate position, or a facing down substrate orientation might even better reduce particles on the substrate during deposition. Yet, the substrate orientation, e.g., during a layer deposition process, is considered substantially vertical, which is different from a horizontal substrate orientation.

[31] Specifically, as used throughout the present disclosure, terms like“vertical direction” or “vertical orientation” are understood to distinguish over “horizontal direction” or “horizontal orientation”. The vertical direction is substantially parallel to the force of gravity.

[32] According to embodiments described herein, the substrate may be loaded onto the carrier in a substantially vertical orientation. The chuck assembly may be in the vacuum mode during loading of the substrate in a substantially vertical orientation. The electrostatic mode of the chuck assembly may be provided during loading of the substrate or when the substrate is held at the substrate support surface when the chuck assembly is in the vacuum mode.

[33] Advantageously, the substrate can be loaded onto the carrier in a substantially vertical orientation. When the chuck assembly is configured to be in a vacuum mode, the substrate is prevented from falling off the carrier. Accordingly, the system is prevented from failure and damage to the substrate is prevented. Loading of the substrate onto the carrier is thus facilitated and accelerated. [34] Alternatively, the substrate may be held in a substantially horizontal orientation, for example, during loading or unloading of the carrier into or out of the processing system. The carrier and the substrate may be brought in a substantially vertical orientation for processing the substrate in the processing system. For example, a swing module may be used to change the orientation of the carrier with the loaded substrate. The electrostatic chucking may also be assisted by vacuum in a horizontal orientation, for example, if gravity forces acting on the substrate may be beneficially supported by a further force.

[35] FIG. 2A shows a schematic front view of a carrier 200 according to embodiments herein. According to embodiments described herein, the carrier includes the substrate support surface 142 and the chuck assembly 120. The substrate support surface may include a plurality of openings 212 connected to a gas conduit. The gas conduit may interconnect the plurality of openings 212. The plurality of openings may be arranged at the substrate support surface in a pattern. For example, the substrate support surface may include rows 213, 214 including openings which are referred to as plurality of openings 212 herein. The rows may form rectangular patterns. Additionally or alternatively other patterns may be provided.

[36] According to embodiments described herein, the gas conduit may be connected to a valve. The valve may be connected to the vacuum generation device and/or to the gas supply. The valve may serve to switch a vacuum mode on or off. Accordingly, for an open valve, the vacuum generation deice is in fluid communication with the gas conduit. The reduced pressure at the substrate support surface provides for vacuum chucking of a substrate to the substrate support surface. For example, the valve may be a two-way valve to switch the vacuum on or off.

[37] According to yet further embodiments, which can be combined with other embodiments described herein a cooling gas or another gas may be provided in the gas conduit. A gas may serve for cooling may and/or for assistance release of the substrate from the substrate support surface, Accordingly, a valve may be a three-way valve or, generally, a valve having two or more ports, such as three or more ports. Having three or more ports allows to provide fluid communication between the gas conduit and the vacuum generation device as well as between the gas conduit and one or more gas sources.

[38] The valve may be regulated by a controller. The valve may be regulated according to the mode of the chuck assembly set by the controller i.e. according to the vacuum mode and/or the electrostatic mode being provided to the chuck assembly. According to some embodiments of the present disclosure, the vacuum mode may be provided by having a vacuum pump in fluid communication with the gas conduit, e.g. by operating the valve.

[39] The gas conduit may be arranged within or at the carrier e.g. the gas conduit may be at least partially provided through the carrier i.e. the non-conductive areas of the carrier. The gas conduit may be connected to a vacuum generation device and/or at least one gas supply. The gas conduit may include a plurality of channels. The gas conduit may include a common conduit to interconnect the plurality of channels. The plurality of channels may be configured to provide a gas to the plurality of openings at the substrate support surface and/or to transport a gas away from the plurality of openings at the substrate support surface.

[40] According to embodiments, the gas conduit may include a plurality of channels connected to the plurality of openings to allow for a gas flow, in particular a bidirectional gas flow, through the plurality of channels.“Bidirectional gas flow” as used herein may be understood as a gas flow in the direction of the substrate support surface and away from the substrate support surface through the gas conduit. A bidirectional flow may include a timely shifted gas flow in opposite directions through the gas conduit.

[41] According to embodiments described herein, a gas may flow in the direction of the plurality of openings through the gas conduit and/or away from the plurality of openings through the gas conduit. Accordingly, for example, when a vacuum is provided, gas may flow from the plurality of openings towards the vacuum generation device. Thus, suctioning may be provided to the substrate at the substrate support surface. Additionally or alternatively, a gas may be provided to the plurality of openings e.g. a gas may be provided by the gas supply. By bursting or pulsing the gas in the direction of the plurality of openings through the gas conduit, the substrate may be pushed away from the substrate support surface.

[42] According to embodiments described herein, a vacuum may be provided via the gas conduit to the substrate support surface. A vacuum force may be provided to the substrate, particularly a suction force, for holding the substrate at the substrate support surface. For example, the vacuum generation device may generate a vacuum at the carrier i.e. at the chucking assembly to hold the substrate via the suction forces at the substrate support surface. For example, the vacuum generation device may be a vacuum pump.

[43] According to embodiments described herein, the gas flow away from and/or towards the substrate support surface i.e. the plurality of openings may be regulated. Regulation of the gas flow may be provided by regulating the valve connecting the gas conduit and the vacuum generation device and/or the gas supply. When providing a gas flow away from the substrate support surface, the substrate may be held at the substrate support surface by vacuum chucking. Accordingly, the chuck assembly may be in a vacuum mode to provide a gas flow away from the substrate support surface.

[44] According to embodiments, the valve may be a two-way valve. The two-way valve may be connected to the vacuum generation device. A vacuum may be applied such that the substrate may be held at the substrate support surface 142. The two-way valve may be controlled or regulated by opening or closing the valve. Accordingly, the valve may be opened when the chuck assembly is in the vacuum mode. The vacuum may be applied to the substrate such that the chuck assembly attracts or sucks the substrate at the substrate support surface.

[45] Additionally or alternatively, the gas flow may be provided towards the substrate support surface. For example, a cooling gas may be provided through the gas conduit i.e. from the gas supply through the gas conduit and through the plurality of openings for cooling the substrate at the substrate support surface. Additionally or alternatively, the gas conduit may provide a vacuum to the substrate support surface.

[46] According to embodiments described herein and with respect to FIG. 2B, the valve may be a three-way valve. The three-way valve may be connected to the vacuum generation device and the gas supply. This configuration is especially useful when the carrier includes a cooling arrangement. The skilled person may understand that the three-way valve may also be used when the carrier does not include a cooling arrangement. For example, the openings in the substrate support surface 142 of the carrier may provide the cooling gas to the substrate for cooling the substrate. Cooling of the substrate is advantageous, for preventing damage or spatial changes to the substrate due to excessive heat. The cooling gas may be e.g. helium.

[47] According to embodiments described herein, the carrier may include a cooling arrangement for cooling the substrate. The cooling arrangement may include the gas conduit and the plurality of openings. The cooling arrangement may further include the plurality of channels, the channels at least partially traversing the carrier. The gas conduit may be configured to provide a cooling gas to the substrate support surface. [48] The cooling arrangement may include a plurality of grooves 216. The grooves 216 may interconnect the plurality of openings at the substrate support surface. The grooves 216 may be configured to spread the cooling gas provided by the gas conduit i.e. from each of the openings of the plurality of openings towards interconnected openings at the substrate support surface to enlarge an area being provided with the cooling gas. Thus, cooling of the substrate may be enhanced.

[49] Advantageously, the substrate at the substrate support surface may be cooled more efficiently. A greater substrate surface area may be in direct contact with the cooling gas. In some implementations, when the vacuum mode is provided, attracting the substrate to the substrate support surface may be enhanced and a uniform attraction over the substrate support surface may be achieved.

[50] According to embodiments that can be combined with any other embodiment described herein, the gas conduit may be configured to unload the substrate from the carrier or at least to support unloading of the substrate from the carrier. The gas conduit may provide a gas pulse or a gas burst to the substrate for pushing the substrate away from the substrate support surface loaded on the carrier.

[51] According to embodiments described herein, the pressure for pushing the substrate away from the substrate support surface may be in the range of 0.6 bar to 20 bar. Advantageously, choosing the pressure in such range allows for overcoming the surrounding atmospheric pressure and/or possible capillary forces built at the chuck assembly and the substrate interface.

[52] Advantageously, providing the gas pulse or gas burst shove to the substrate for pushing the substrate away from the substrate support surface counteracts the electrostatic field. When the electrostatic mode is turned off for unloading the substrate, the ceasing of the electrostatic forces may be slow and incomplete. Thus, unloading of the substrate is facilitated when pushing the substrate away from the electrostatic field. Additionally, unloading of the substrate from the carrier may be accelerated and damage to the substrate to be unloaded may be avoided or prevented.

[53] FIG. 3 exemplarily shows a schematic view of a processing system 300 for processing a substrate according to embodiments described herein. Particularly, the processing system may be a material deposition system. The processing system includes a loading station 372, a vacuum processing chamber 390, and a load lock chamber 380 between the loading station and the vacuum processing chamber. The loading station is configured for vertical loading of the substrate on a carrier according to embodiments described herein. The loading station 372 may be an atmospheric chamber 370 i.e. a chamber where atmospheric pressure is provided. The processing system includes a vacuum generation device to hold the substrate in a vacuum mode on the substrate support surface. The processing system may further include one or more transfer chambers 382.

[54] Processing of a substrate may be understood as transferring material to a substrate, etching a substrate, pre-treatment of a substrate, heating the substrate, e.g. during annealing, or another substrate processing. For example, deposition material may be deposited on the substrate, for example, by a CVD process or a PVD process, such as sputtering or evaporation. The substrate 10 may include a deposition material receiving side. The deposition material receiving side of the substrate may be regarded as the side of the substrate facing a deposition source. Further, processing of a substrate may also include transportation of the substrate from one chamber to another chamber of the processing system.

[55] According to embodiments, the processing system 300 may be configured for CVD or PVD processes, such as sputter deposition. In another example, the system can be configured for evaporation of e.g. an organic material for the manufacture of OLED devices. For example, the processing system may be a processing system for large area substrates, e.g., for display manufacturing. Specifically, the processing systems for which the structures and methods according to embodiments described herein are provided, are for processing large area substrates having, for example, an area of 1 m ² or larger. For instance, a large area substrate can be GEN 5, which corresponds to a surface area of about 1.4 m ² (1.1 m x 1.3 m), GEN 7.5, which corresponds to a surface area of about 4.29 m ² (1.95 m x 2.2 m), GEN 8.5, which corresponds to a surface area of about 5.7 m ² (2.2 m x 2.5 m), or even GEN 10, which corresponds to a surface area of about 8.7 m ² (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding surface areas can similarly be implemented.

[56] According to embodiments described herein, the processing system i.e. the vacuum processing chamber may include one or more material deposition sources 392. The one or more material deposition sources may be sources for sputter deposition or evaporation of one or more materials on a substrate. [57] According to embodiments, the processing system may process the substrate under vacuum conditions. Vacuum conditions as used herein include pressure conditions in the range of below 10 ¹ mbar or below 10 ³ mbar, such as 10 ⁷ mbar to 10 ² mbar. Vacuum conditions may be applied through the use of vacuum pumps or other vacuum creating techniques. For example, vacuum conditions in the load lock chamber may be switched between atmospheric pressure conditions and subatmospheric pressure conditions, e.g. in a range at or below 10 ¹ mbar. For transferring a substrate into a high vacuum chamber, the substrate may be inserted into the load lock chamber provided at atmospheric pressure, the load lock chamber may be sealed, and subsequently may be set at a subatmospheric pressure in the range below 10 ¹ mbar. Subsequently, an opening between the load lock chamber and the high vacuum chamber may be opened, and the substrate may be inserted into the high vacuum chamber to be transported into the processing chamber.

[58] According to embodiments, the substrate processing system may include a transport system 385. The transport system may be configured to transport one or more carriers. The one or more carriers may be configured for transporting one or more substrates 10. Particularly, the transport system 385 may include transportation paths extending through the processing system. The one or more carriers may be transported through the processing system with or without having loaded one of the one or more substrates 10. The transport system may include a magnetic levitation transport system and/or a mechanical transport system.

[59] According to embodiments that can be combined with any other embodiment described herein, the processing system may include a carrier including a chuck assembly as described with respect to FIGs. 1, 2A and 2B. The chuck assembly may hold the substrate in a vacuum mode. More particularly, before providing a vacuum to the processing system for processing the substrate, the electrostatic mode may be provided at the chuck assembly and the vacuum mode may be turned off to avoid adverse effects between the vacuum provided in the processing system for processing the substrate and the vacuum generated at the carrier for holding the substrate.

[60] FIG. 4 shows a flow chart of a method 400 of transporting a substrate in a processing system according to embodiments described herein. The method 400 includes in box 410 providing a vacuum to a chuck assembly for attracting a substrate. The chuck assembly may be in a vacuum mode. [61] The method 400 includes in box 420 loading the substrate on a substrate support surface of the carrier. The substrate may be loaded onto the carrier in a substantially horizontal orientation or in a substantially vertical orientation. In particular, the substrate may be loaded in a vertical orientation to the vertically oriented carrier. The substrate may be attracted by the vacuum at the substrate support surface.

[62] The method 400 includes in box 430 providing electrostatic forces to the substrate with the chuck assembly. An electrostatic mode may be provided at the chuck assembly to electrostatically attract the substrate. The vacuum mode of the chuck assembly may be switched off. The chuck assembly may include a gas conduit for providing the vacuum to the substrate or optionally, to provide a cooling gas to the substrate. For example, when switching off the vacuum, the cooling gas for cooling the substrate may be provided to the substrate support surface of the carrier.

[63] According to embodiments described herein, the method may further include transporting the carrier and the substrate through a processing system. The carrier may carry the substrate for processing the substrate in a processing chamber and out of the processing system. The method may further include unloading the substrate from the carrier. Unloading of the substrate may include pushing the substrate away from the carrier by providing a gas pulse or gas burst to a rear side of the substrate. The rear side of the substrate may be the side of the substrate facing the substrate support surface. For example, a gas pulse or gas burst may be provided through the plurality of openings to detach the substrate from the substrate support surface. Advantageously, release or detachment of the substrate from the carrier may be facilitated.

[64] While the foregoing is directed to embodiments, other and further embodiments may be devised without departing from the basic scope, and the scope is determined by the claims that follow.

[65] In particular, this written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if the claims have structural elements that do not differ from the literal language of the claims, or if the claims include equivalent structural elements with insubstantial differences from the literal language of the claims.