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Title:
PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES
Document Type and Number:
WIPO Patent Application WO/2009/099721
Kind Code:
A9
Abstract:
One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.

Inventors:
BURROWS BRIAN H (US)
WASHINGTON LORI D (US)
STEVENS RONALD (US)
CHOI KENRIC T (US)
WHITE ANTHONY F (US)
ANDERSON ROGER N (US)
NIJHAWAN SANDEEP (US)
PODESTA JOSHUA J (US)
TAM ALEXANDER (US)
Application Number:
PCT/US2009/030862
Publication Date:
December 09, 2010
Filing Date:
January 13, 2009
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
BURROWS BRIAN H (US)
WASHINGTON LORI D (US)
STEVENS RONALD (US)
CHOI KENRIC T (US)
WHITE ANTHONY F (US)
ANDERSON ROGER N (US)
NIJHAWAN SANDEEP (US)
PODESTA JOSHUA J (US)
TAM ALEXANDER (US)
International Classes:
H01L21/677; H01L21/20; H01L21/205; H01L33/00
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston Texas, US)
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