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Title:
PRODUCTION METHOD AND PRODUCTION DEVICE OF SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2019/176447
Kind Code:
A1
Abstract:
This production method of silicon carbide single crystal, for sublimating a silicon carbide raw material to grow a silicon carbide single crystal on a seed crystal substrate with a silicon carbide single crystal growth device provided with at least a growth vessel and a heat insulation vessel having a temperature measurement hole around said growth vessel, is characterized by measuring the temperature of the growth vessel through the temperature measurement hole during growth of the silicon carbide single crystal, and by blocking the temperature measurement hole with a shielding member when growth of the silicon carbide single crystal is complete and the silicon carbide single crystal is cooled. In this way, a production method and production device of a silicon carbide single crystal are provided which decrease breakage and cracking of silicon carbide single crystal ingots and wafers.

Inventors:
IKEDA HITOSHI (JP)
TAKAHASHI TORU (JP)
AOYAMA TETSURO (JP)
Application Number:
PCT/JP2019/005732
Publication Date:
September 19, 2019
Filing Date:
February 18, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/36
Foreign References:
JP2012206875A2012-10-25
JP2014040357A2014-03-06
JPH04219386A1992-08-10
JP2005231969A2005-09-02
JP2000191399A2000-07-11
JP2005239465A2005-09-08
Other References:
See also references of EP 3767015A4
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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