Title:
PRODUCTION METHOD FOR HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY LANTHANUM, AND METAL GATE FILM CONTAINING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
Document Type and Number:
WIPO Patent Application WO/2012/067061
Kind Code:
A1
Abstract:
A production method for high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, the method being characterized by the production of lanthanum having a purity of 4N or more by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the removal of volatile substances by electron beam melting. The production method for high-purity lanthanum is characterized in that Al, Fe, and Cu are each contained in an amount of 10 wtppm or less. The production method for high-purity lanthanum is also characterized in that the total amount of gas components is 1000 wtppm or less. In this manner the present invention addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.
Inventors:
TAKAHATA MASAHIRO (JP)
GOHARA TAKESHI (JP)
GOHARA TAKESHI (JP)
Application Number:
PCT/JP2011/076162
Publication Date:
May 24, 2012
Filing Date:
November 14, 2011
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
TAKAHATA MASAHIRO (JP)
GOHARA TAKESHI (JP)
TAKAHATA MASAHIRO (JP)
GOHARA TAKESHI (JP)
International Classes:
C22B59/00; C22B5/04; C22B9/22; C23C14/14; C23C14/34; C22C28/00
Domestic Patent References:
| WO2009084318A1 | 2009-07-09 |
Foreign References:
| JPH10287402A | 1998-10-27 | |||
| JP2007169683A | 2007-07-05 | |||
| JPH04214824A | 1992-08-05 | |||
| JPH0446014A | 1992-02-17 | |||
| JPH0517134A | 1993-01-26 | |||
| JPS6311628A | 1988-01-19 |
Other References:
KABUSHIKI KAISHA CMC: "Kojundo Kinzoku no Seizo to Oyo", vol. 8, KENTARO SHIMA, pages: 124 - 129, XP008170911
EISUKE TOKUMITSU: "Study of oxide materials for High-k gate insulator film", vol. 6-13, 21 September 2001, THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN, pages: 37 - 41
See also references of EP 2641982A4
EISUKE TOKUMITSU: "Study of oxide materials for High-k gate insulator film", vol. 6-13, 21 September 2001, THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN, pages: 37 - 41
See also references of EP 2641982A4
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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Claims: