Title:
PRODUCTION METHOD FOR A LIGHT-SENSITIVE THIN-LAYER STRUCTURE FOR CATALYTIC HYDROGEN PRODUCTION AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2011/116750
Kind Code:
A3
Abstract:
Known photocathodes do not have sufficient efficiency or long-term stability. A high-cost indium phosphide wafer must be used. The method according to the invention provides an efficient thin-layer structure (01) for light-induced electrolysis for the first time. The method comprises a preparation step (PREP) for homoepitaxially producing a thin indium phosphide layer (03) having a special surface that can be activated in a light-induced manner on a {100} indium phosphide wafer (02). In a conditioning step (COND), the indium phosphide layer (03) is then catalytically activated by means of cyclic voltammetry in chloride-containing acid in order to produce an interfacial film (04). Then, in a deposition step (DEP) that reinforces the interfacial film (04) further, a thin catalytically active layer (05) of nanoparticles (06) made of a transition metal Rh, Pt, Ir, Co, Cr, Mn, Ni, Mo, or Fe or a mixture thereof is deposited and covers the interfacial film (04) completely. The indium phosphide layer (03) or the thin-layer structure (01) can be removed from the indium phosphide wafer (02) in a separation step (SEP) and transferred to any substrate having a conductive surface for a photocathode. Therefore, the high-cost indium phosphide wafer (02) can be reused.
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Inventors:
HEINE CHRISTIAN (DE)
LEWERENZ HANS-JOACHIM (DE)
HANNAPPEL THOMAS (DE)
KLEMM HAGEN (DE)
MUNOZ ANDRES (DE)
SZABO NADINE (DE)
LEWERENZ HANS-JOACHIM (DE)
HANNAPPEL THOMAS (DE)
KLEMM HAGEN (DE)
MUNOZ ANDRES (DE)
SZABO NADINE (DE)
Application Number:
PCT/DE2011/000280
Publication Date:
December 01, 2011
Filing Date:
March 18, 2011
Export Citation:
Assignee:
HELMHOLTZ ZENT B MAT & ENERG (DE)
HEINE CHRISTIAN (DE)
LEWERENZ HANS-JOACHIM (DE)
HANNAPPEL THOMAS (DE)
KLEMM HAGEN (DE)
MUNOZ ANDRES (DE)
SZABO NADINE (DE)
HEINE CHRISTIAN (DE)
LEWERENZ HANS-JOACHIM (DE)
HANNAPPEL THOMAS (DE)
KLEMM HAGEN (DE)
MUNOZ ANDRES (DE)
SZABO NADINE (DE)
International Classes:
H01J1/34; H01J9/12; H01L27/142; H01L31/00
Other References:
A. HELLER ET AL: "Hydrogen-evolving semiconductor photocathodes: nature of the junction and function of the platinum group metal catalyst", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 104, no. 25, 1 December 1982 (1982-12-01), pages 6942 - 6948, XP055008362, ISSN: 0002-7863, DOI: 10.1021/ja00389a010
HIKARU KOBAYASHI ET AL: "Improvement in Hydrogen Photoevolution Efficiency for Platinum-Deposited Indium Phosphide Electrodes by the Removal of Surface States", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 33, no. Part 1, No. 10, 15 October 1994 (1994-10-15), pages 6065 - 6070, XP055008365, ISSN: 0021-4922, DOI: 10.1143/JJAP.33.6065
S. MENEZES: "Electrolyte-oxide-semiconductor junction at the p-InP/V2+-V3+ interface", APPLIED PHYSICS LETTERS, vol. 38, no. 9, 1 January 1981 (1981-01-01), pages 710, XP055008366, ISSN: 0003-6951, DOI: 10.1063/1.92488
LEWERENZ H J ET AL: "Combined photoelectrochemical conditioning and surface analysis of InP photocathodes - II. Photoelectron spectroscopy", ELECTROCHIMICA ACTA, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 47, no. 16, 21 June 2002 (2002-06-21), pages 2639 - 2651, XP004359427, ISSN: 0013-4686, DOI: 10.1016/S0013-4686(02)00125-1
T. HANNAPPEL ET AL: "In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K", JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 11, 1 November 2001 (2001-11-01), pages 1425 - 1428, XP055008370, ISSN: 0361-5235, DOI: 10.1007/s11664-001-0196-7
W. SCHMIDT ET AL: "Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2x4)", PHYSICAL REVIEW B, vol. 61, no. 24, 1 June 2000 (2000-06-01), pages R16335 - R16338, XP055008371, ISSN: 0163-1829, DOI: 10.1103/PhysRevB.61.R16335
HIKARU KOBAYASHI ET AL: "Improvement in Hydrogen Photoevolution Efficiency for Platinum-Deposited Indium Phosphide Electrodes by the Removal of Surface States", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 33, no. Part 1, No. 10, 15 October 1994 (1994-10-15), pages 6065 - 6070, XP055008365, ISSN: 0021-4922, DOI: 10.1143/JJAP.33.6065
S. MENEZES: "Electrolyte-oxide-semiconductor junction at the p-InP/V2+-V3+ interface", APPLIED PHYSICS LETTERS, vol. 38, no. 9, 1 January 1981 (1981-01-01), pages 710, XP055008366, ISSN: 0003-6951, DOI: 10.1063/1.92488
LEWERENZ H J ET AL: "Combined photoelectrochemical conditioning and surface analysis of InP photocathodes - II. Photoelectron spectroscopy", ELECTROCHIMICA ACTA, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 47, no. 16, 21 June 2002 (2002-06-21), pages 2639 - 2651, XP004359427, ISSN: 0013-4686, DOI: 10.1016/S0013-4686(02)00125-1
T. HANNAPPEL ET AL: "In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K", JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 11, 1 November 2001 (2001-11-01), pages 1425 - 1428, XP055008370, ISSN: 0361-5235, DOI: 10.1007/s11664-001-0196-7
W. SCHMIDT ET AL: "Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2x4)", PHYSICAL REVIEW B, vol. 61, no. 24, 1 June 2000 (2000-06-01), pages R16335 - R16338, XP055008371, ISSN: 0163-1829, DOI: 10.1103/PhysRevB.61.R16335
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