Title:
PRODUCTION METHOD FOR NONVOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/168027
Kind Code:
A1
Abstract:
A production method for a nonvolatile storage device (10). The production method includes: a step for laminating second sacrificial layers (56) at exposed portions of first sacrificial layers that are exposed at stair-shaped end parts of a multilayer film (44) that is formed by alternatingly laminating first insulation layers (52) and the first sacrificial layers (54); a step for laminating a second insulation layer (46) on the multilayer film so as to cover the second sacrificial layers; a step for replacing the first sacrificial layers and the second sacrificial layers with conductive layers (74); and a step for etching the second insulation layer toward thick portions (74a) of the conductive layers, the thick portions being positioned in the spaces at which the second sacrificial layers and the exposed portions of the first sacrificial layers were disposed and being thicker than other portions.
Inventors:
KIBI KAZUO (JP)
OKUBO KAZUYA (JP)
TSUDA TOSHITAKE (JP)
LEE CHANGWON (JP)
KATO HITOSHI (JP)
OKUBO KAZUYA (JP)
TSUDA TOSHITAKE (JP)
LEE CHANGWON (JP)
KATO HITOSHI (JP)
Application Number:
PCT/JP2019/007555
Publication Date:
September 06, 2019
Filing Date:
February 27, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L27/11548; H01L21/336; H01L27/11556; H01L27/11575; H01L27/11582; H01L29/788; H01L29/792
Foreign References:
| US20180053686A1 | 2018-02-22 | |||
| US20150287710A1 | 2015-10-08 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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