Title:
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/167693
Kind Code:
A1
Abstract:
The purpose of the present invention is to improve semiconductor yield, and to extend the life of a socket terminal. A distal end part (PU) of a socket terminal (STE1) is provided with a protruding part (PJ1) and a protruding part (PJ2). In so doing, contact between, for example, the socket terminal (STE1) and a lead through which a large current flows can take place at two points, through contact afforded by the protruding part (PJ1) and contact afforded by the protruding part (PJ2). As a result, the flow of electrical current flowing from the socket terminal (STE1) to the lead is dispersed onto a path flowing through the protruding part (PJ1) and a path flowing through the protruding part (PJ2). Consequently, rise in temperature of the contacting portions of the socket terminal (STE1) and the lead can be kept to a minimum, even in instances of large current flow between the socket terminal (STE1) and the lead.
Inventors:
ISHII TOSHITSUGU (JP)
MAKIHIRA NAOHIRO (JP)
IWASAKI HIDEKAZU (JP)
MATSUHASHI JUN (JP)
MAKIHIRA NAOHIRO (JP)
IWASAKI HIDEKAZU (JP)
MATSUHASHI JUN (JP)
Application Number:
PCT/JP2013/060967
Publication Date:
October 16, 2014
Filing Date:
April 11, 2013
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP (JP)
International Classes:
G01R31/26
Foreign References:
| JP2007096196A | 2007-04-12 | |||
| JP2002071748A | 2002-03-12 | |||
| JP2010273541A | 2010-12-02 | |||
| JP2012220438A | 2012-11-12 | |||
| JP2005277168A | 2005-10-06 | |||
| JP2010067755A | 2010-03-25 | |||
| JP2002071716A | 2002-03-12 |
Other References:
See also references of EP 2985614A4
Attorney, Agent or Firm:
TSUTSUI, Yamato et al. (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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