Title:
PRODUCTION METHOD FOR A SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/033299
Kind Code:
A3
Abstract:
Provided is a production method for a semiconductor element comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor element comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.
Inventors:
KIM HAI WON (KR)
WOO SANG HO (KR)
CHO SUNG KIL (KR)
JANG GIL SUN (KR)
WOO SANG HO (KR)
CHO SUNG KIL (KR)
JANG GIL SUN (KR)
Application Number:
PCT/KR2011/006389
Publication Date:
June 14, 2012
Filing Date:
August 30, 2011
Export Citation:
Assignee:
EUGENE TECHNOLOGY CO LTD (KR)
KIM HAI WON (KR)
WOO SANG HO (KR)
CHO SUNG KIL (KR)
JANG GIL SUN (KR)
KIM HAI WON (KR)
WOO SANG HO (KR)
CHO SUNG KIL (KR)
JANG GIL SUN (KR)
International Classes:
H01L21/24; C01B33/06; C23C14/16
Foreign References:
| KR20090106880A | 2009-10-12 | |||
| KR100272653B1 | 2000-12-01 | |||
| KR20040001455A | 2004-01-07 |
Attorney, Agent or Firm:
JEONG, Seong Jin (UZU-BUILDING 612-93,Banpo-dong, Seocho-gu, Seoul 137-807, KR)
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Claims: