Title:
PRODUCTION METHOD FOR SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND PRODUCTION METHOD FOR SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/076921
Kind Code:
A1
Abstract:
The present invention provides a production method for a semiconductor epitaxial wafer in which increased gettering properties enable metal contamination to be suppressed. In the present invention, the production method for the semiconductor epitaxial wafer is characterized in that the method includes: a first step, in which cluster ions (16) are irradiated on a surface (10A) of a semiconductor wafer (10) so as to form, on the surface (10A) of the semiconductor wafer, a modification layer (18) that is a solid solution of carbon and a dopant element, which are constituent elements of the cluster ions (16); and a second step in which an epitaxial layer (20), which has a lower dopant element concentration than the peak dopant element concentration in the modification layer (18), is formed upon the modification layer (18) of the semiconductor.
Inventors:
KADONO TAKESHI (JP)
KURITA KAZUNARI (JP)
KURITA KAZUNARI (JP)
Application Number:
PCT/JP2013/006610
Publication Date:
May 22, 2014
Filing Date:
November 11, 2013
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/322; C23C16/02; C23C16/42; C30B23/02; H01L21/20; H01L21/205; H01L21/265; H01L27/14
Foreign References:
| JP2010040864A | 2010-02-18 | |||
| JP2012059849A | 2012-03-22 | |||
| JP2009540531A | 2009-11-19 | |||
| JP2011151318A | 2011-08-04 | |||
| JP2009518869A | 2009-05-07 | |||
| JP2011253983A | 2011-12-15 |
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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