Title:
PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE, AND SET SUCH AS POLISHING COMPOSITION SET
Document Type and Number:
WIPO Patent Application WO/2019/188901
Kind Code:
A1
Abstract:
Provided is a production method for a semiconductor substrate. The production method makes it possible to control the post-production shape of the substrate to a high degree. This production method for a semiconductor substrate includes a back surface processing step for processing a back surface of a wafer-shaped processing target. After the back surface processing step, there is a processing distortion layer on the back surface. The depth of the processing distortion layer that is on the back surface is greater than the depth of a processing distortion layer that is on a front surface of the semiconductor substrate, or there is no processing distortion layer on the front surface.
Inventors:
NOGUCHI NAOTO (JP)
Application Number:
PCT/JP2019/012358
Publication Date:
October 03, 2019
Filing Date:
March 25, 2019
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
H01L21/304; B24B7/22; B24B37/00; C09K3/14
Domestic Patent References:
WO2013021902A1 | 2013-02-14 | |||
WO2012049792A1 | 2012-04-19 |
Foreign References:
JP2013201397A | 2013-10-03 | |||
JPH08321445A | 1996-12-03 | |||
JP2005136167A | 2005-05-26 | |||
JPS54134563A | 1979-10-19 |
Attorney, Agent or Firm:
ABE, Makoto (JP)
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